New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching

2006 ◽  
Vol 45 (6B) ◽  
pp. 5513-5516 ◽  
Author(s):  
Kazuhiko Endo ◽  
Shuichi Noda ◽  
Takuya Ozaki ◽  
Seiji Samukawa ◽  
Meishoku Masahara ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Neutral Beam ◽  
Fabrication Technology ◽  
Neutral Beam Etching

High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation

2010 ◽  
Vol 49 (4) ◽  
pp. 04DC17 ◽  
Author(s):  
Akira Wada ◽  
Keisuke Sano ◽  
Masahiro Yonemoto ◽  
Kazuhiko Endo ◽  
Takashi Matsukawa ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Neutral Beam ◽  
Neutral Beam Etching

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

A new fabrication technology of FinFETs using a neutral beam etching

2005 ◽  
Author(s):  
K. Endo ◽  
S. Noda ◽  
T. Ozaki ◽  
S. Samukawa ◽  
M. Masahara ◽  
...  
Keyword(s):  
Neutral Beam ◽  
Fabrication Technology ◽  
Neutral Beam Etching

CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

2011 ◽  
Vol 1283 ◽  
Author(s):  
Benjamin Mailly Giacchetti ◽  
Allen Hsu ◽  
Han Wang ◽  
Ki Kang Kim ◽  
Jing Kong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Ph Sensing ◽  
Fabrication Technology ◽  
Initial Characterization ◽  
Effect Transistor ◽  
Grown Graphene ◽  
Graphene Fet

ABSTRACTThis paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.

Ion Sensitive Field Effect Transistors: Basic Principles and Fabrication Technology

1995 ◽  
pp. 55-62
Author(s):  
Giovanni Soncini ◽  
Antonella Lavarian ◽  
Alberto Lui ◽  
Benno Margesin ◽  
Vittorio Zanini ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication Technology ◽  
Basic Principles

Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching

2006 ◽  
Vol 45 (No. 10) ◽  
pp. L279-L281 ◽  
Author(s):  
Kazuhiko Endo ◽  
Shuichi Noda ◽  
Meishoku Masahara ◽  
Tomohiro Kubota ◽  
Takuya Ozaki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Neutral Beam ◽  
Double Gate ◽  
Effect Transistor ◽  
Neutral Beam Etching

New Fabrication Technology for Integrating Field Effect Transistors and Diodes

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1194-1197 ◽  
Author(s):  
Jong-Wan Jung ◽  
Song-Cheol Hong ◽  
Young-Se Kwon
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication Technology
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