Impact of (111)-Oriented SrRuO3/Pt Tailored Electrode for Highly Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O3Films for High Density Ferroelectric Random Access Memory Applications

Nicolas Menou; Hiroki Kuwabara; Hiroshi Funakubo

doi:10.1143/jjap.46.2139

Impact of (111)-Oriented SrRuO3/Pt Tailored Electrode for Highly Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O3Films for High Density Ferroelectric Random Access Memory Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2139 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2139-2142 ◽

Cited By ~ 9

Author(s):

Nicolas Menou ◽

Hiroki Kuwabara ◽

Hiroshi Funakubo

Keyword(s):

Chemical Vapour ◽

Random Access ◽

Random Access Memory ◽

High Density ◽

Organic Chemical ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Metal Organic ◽

Memory Applications

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Liquid Delivery Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3Thin Films for High-Density Ferroelectric Random Access Memory Application

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.6690 ◽

2002 ◽

Vol 41 (Part 1, No. 11B) ◽

pp. 6690-6694 ◽

Cited By ~ 30

Author(s):

June Key Lee ◽

Moon-Sook Lee ◽

Sungho Hong ◽

Wanin Lee ◽

Yong Kyun Lee ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Organic Chemical ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9 film for high density ferroelectric random access memory applications at low voltage operation

Thin Solid Films ◽

10.1016/j.tsf.2004.08.087 ◽

2005 ◽

Vol 473 (2) ◽

pp. 328-334 ◽

Cited By ~ 5

Author(s):

Manfred Moert ◽

Thomas Mikolajick ◽

Guenther Schindler ◽

Nicolas Nagel ◽

Igor Kasko ◽

...

Keyword(s):

Low Voltage ◽

Random Access ◽

Random Access Memory ◽

High Density ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Low Voltage Operation ◽

Memory Applications

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Bit Distribution and Reliability of High Density 1.5 V Ferroelectric Random Access Memory Embedded with 130 nm, 5 lm Copper Complementary Metal Oxide Semiconductor Logic

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3202 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3202-3206 ◽

Cited By ~ 10

Author(s):

K. R. Udayakumar ◽

K. Boku ◽

K. A. Remack ◽

J. Rodriguez ◽

S. R. Summerfelt ◽

...

Keyword(s):

Metal Oxide ◽

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Access Memory ◽

Ferroelectric Random Access Memory

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High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics ◽

10.1109/isaf.2007.4393151 ◽

2007 ◽

Cited By ~ 2

Author(s):

S.R. Summerfelt ◽

T.S. Moise ◽

K.R. Udayakumar ◽

K. Boku ◽

K. Remack ◽

...

Keyword(s):

Low Power ◽

Random Access ◽

Random Access Memory ◽

High Density ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Logic Process

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Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

Thin Solid Films ◽

10.1016/s0040-6090(02)00846-5 ◽

2002 ◽

Vol 422 (1-2) ◽

pp. 150-154 ◽

Cited By ~ 13

Author(s):

Dong-Gun Lim ◽

Dong-Joo Kwak ◽

Junsin Yi

Keyword(s):

Buffer Layer ◽

Yttrium Oxide ◽

Silicon Substrate ◽

Random Access ◽

Random Access Memory ◽

Interface Properties ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Memory Applications

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Preparation of Pb(ZrxTi1 - x)O3 Films on Trench Structure for High-Density Ferroelectric Random Access Memory

Integrated Ferroelectrics ◽

10.1080/10584580490894771 ◽

2004 ◽

Vol 66 (1) ◽

pp. 85-95 ◽

Cited By ~ 6

Author(s):

YOUNGSOO PARK ◽

JUNG HYUN LEE ◽

JUNE MO KOO ◽

SUK PIL KIM ◽

SANGMIN SHIN ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

High Density ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Trench Structure

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Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2710 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2710-2713 ◽

Cited By ~ 11

Author(s):

K. R. Udayakumar ◽

T. S. Moise ◽

S. R. Summerfelt ◽

K. Boku ◽

K. Remack ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

High Density ◽

Access Memory ◽

Ferroelectric Random Access Memory

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Electrical Properties of Bilayer SrBi2Ta2O9/Ba(Zr0.1 Ti0.9)O3 Thin Films for Ferroelectric Random Access Memory Applications

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450089 ◽

2007 ◽

Author(s):

W. C. Tzou ◽

K. H. Chen ◽

C. F. Yang ◽

C. C. Li

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Memory Applications

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Integration of lead zirconium titanate thin films for high density ferroelectric random access memory

Journal of Applied Physics ◽

10.1063/1.2337361 ◽

2006 ◽

Vol 100 (5) ◽

pp. 051604 ◽

Cited By ~ 57

Author(s):

Kinam Kim ◽

Sungyung Lee

Keyword(s):

Thin Films ◽

Random Access ◽

Random Access Memory ◽

High Density ◽

Zirconium Titanate ◽

Lead Zirconium Titanate ◽

Access Memory ◽

Ferroelectric Random Access Memory

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High-density chain ferroelectric random-access memory (CFRAM)

Symposium on VLSI Circuits ◽

10.1109/vlsic.1997.623818 ◽

1997 ◽

Cited By ~ 7

Author(s):

Takashima ◽

Kunishima ◽

Noguchi ◽

Takagi

Keyword(s):

Random Access ◽

Random Access Memory ◽

High Density ◽

Access Memory ◽

Ferroelectric Random Access Memory

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