Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9 film for high density ferroelectric random access memory applications at low voltage operation

2005 ◽  
Vol 473 (2) ◽  
pp. 328-334 ◽  
Author(s):  
Manfred Moert ◽  
Thomas Mikolajick ◽  
Guenther Schindler ◽  
Nicolas Nagel ◽  
Igor Kasko ◽  
...  
Keyword(s):  
Low Voltage ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Low Voltage Operation ◽  
Memory Applications

scholarly journals Challenges and Applications of Emerging Nonvolatile Memory Devices

Electronics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 1029 ◽  
Author(s):  
Writam Banerjee
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
High Density ◽  
Memory Storage ◽  
Access Memory ◽  
Ultra Low Power

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer torque random access memory, and resistive random-access memory (RRAM) are major emerging technologies. This review explains all varieties of prototype and eNVM devices, their challenges, and their applications. A performance comparison shows that it is difficult to achieve a “universal memory” which can fulfill all requirements. Compared to other emerging alternative devices, RRAM technology is showing promise with its highly scalable, cost-effective, simple two-terminal structure, low-voltage and ultra-low-power operation capabilities, high-speed switching with high-endurance, long retention, and the possibility of three-dimensional integration for high-density applications. More precisely, this review explains the journey and device engineering of RRAM with various architectures. The challenges in different prototype and eNVM devices is disused with the conventional and novel application areas. Compare to other technologies, RRAM is the most promising approach which can be applicable as high-density memory, storage class memory, neuromorphic computing, and also in hardware security. In the post-CMOS era, a more efficient, intelligent, and secure computing system is possible to design with the help of eNVM devices.

Preparation of Pb(ZrxTi1 - x)O3 Films on Trench Structure for High-Density Ferroelectric Random Access Memory

2004 ◽  
Vol 66 (1) ◽  
pp. 85-95 ◽  
Author(s):  
YOUNGSOO PARK ◽  
JUNG HYUN LEE ◽  
JUNE MO KOO ◽  
SUK PIL KIM ◽  
SANGMIN SHIN ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Trench Structure

Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory

2008 ◽  
Vol 47 (4) ◽  
pp. 2710-2713 ◽  
Author(s):  
K. R. Udayakumar ◽  
T. S. Moise ◽  
S. R. Summerfelt ◽  
K. Boku ◽  
K. Remack ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Ferroelectric Random Access Memory
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