Layout Dependent Induced Leakage and its Prevention with Different Shallow Trench Isolation Schemes in 0.18 µm Dual Gate Complementary Metal Oxide Semiconductor Technology

Oxide Semiconductor ◽

Trench Isolation ◽

Dual Gate

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology

10.1116/1.3359612 ◽

2010 ◽

Vol 28 (2) ◽

pp. 391-397 ◽

Cited By ~ 3

Author(s):

Chan-Yuan Hu ◽

Jone F. Chen ◽

Shih-Chih Chen ◽

Shoou-Jinn Chang ◽

Shih-Ming Wang ◽

...

Keyword(s):

Metal Oxide ◽

Low Power ◽

Oxide Semiconductor ◽

Isolation Stress ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology

10.1116/1.589581 ◽

1997 ◽

Vol 15 (6) ◽

pp. 1936 ◽

Cited By ~ 18

Author(s):

A. Chatterjee

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Dual-Workfunction Gate Engineering in a Corner Parasitics-Free Shallow-Trench-Isolation Complementary-Metal-Oxide-Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.2232 ◽

1999 ◽

Vol 38 (Part 1, No. 4B) ◽

pp. 2232-2237 ◽

Cited By ~ 2

Author(s):

Udo Schwalke ◽

Marc Füldner ◽

Walter Zatsch ◽

Katja Bothe ◽

Dariusch Hadawi ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Trench Isolation ◽

Gate Engineering

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal–oxide–semiconductor fabrication

10.1116/1.1475984 ◽

2002 ◽

Vol 20 (3) ◽

pp. 918 ◽

Cited By ~ 18

Author(s):

Sam-Dong Kim ◽

In-Seok Hwang ◽

Hyung-Moo Park ◽

Jin-Koo Rhee ◽

Chul-Woo Nam

Keyword(s):

Metal Oxide ◽

Chemical Mechanical Polishing ◽

High Selectivity ◽

Mechanical Polishing ◽

Oxide Semiconductor ◽

Trench Isolation ◽

Semiconductor Fabrication

Abnormal Junction Profile of Submicrometer Complementary Metal Oxide Semiconductor Devices with Co Silicidation and Shallow Trench Isolation Processes

Electrochemical and Solid-State Letters ◽

10.1149/1.1403216 ◽

2001 ◽

Vol 4 (11) ◽

pp. G88 ◽

Cited By ~ 2

Author(s):

Chel-Jong Choi ◽

Tae-Yeon Seong ◽

Key-Min Lee ◽

Joo-Hyoung Lee ◽

Young-Jin Park ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.2611 ◽

2001 ◽

Vol 40 (Part 1, No. 4B) ◽

pp. 2611-2615 ◽

Cited By ~ 1

Author(s):

Kohei Sugihara ◽

Naruhisa Miura ◽

Taisuke Furukawa ◽

Takumi Nakahata ◽

Toshiyuki Oishi ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Dual Gate ◽

Elevated Source

Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region

Current Applied Physics ◽

10.1016/j.cap.2007.10.086 ◽

2009 ◽

Vol 9 (1) ◽

pp. 9-12 ◽

Cited By ~ 3

Author(s):

Kee-Yeol Na ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

High Performance ◽

Oxide Semiconductor ◽

Drift Region ◽

A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Cited By ~ 21

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Oxide Semiconductor ◽

Light Emitting

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Cited By ~ 2

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Cited By ~ 12

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Soft Error ◽

Oxide Semiconductor ◽

Memory Design