A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations

Oxide Semiconductor ◽

Dual Gate ◽

Elevated Source

Layout Dependent Induced Leakage and its Prevention with Different Shallow Trench Isolation Schemes in 0.18 µm Dual Gate Complementary Metal Oxide Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.375 ◽

2007 ◽

Vol 46 (1) ◽

pp. 375-377

Author(s):

Seong Yeol Mun ◽

Kyeong Cheol Shin ◽

Sang Bum Huh ◽

Je Il Ju ◽

Jae Yeong Kim ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Dual Gate

Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.387 ◽

2000 ◽

Vol 39 (Part 1, No. 2A) ◽

pp. 387-389 ◽

Cited By ~ 8

Author(s):

Kohei Sugihara ◽

Naruhisa Miura ◽

Taisuke Furukawa ◽

Takumi Nakahata ◽

Yasutaka Nishioka ◽

...

Keyword(s):

Metal Oxide ◽

Deep Submicron ◽

Oxide Semiconductor ◽

Parasitic Resistance ◽

Resistance Reduction ◽

Dual Gate ◽

Elevated Source

A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Cited By ~ 21

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Oxide Semiconductor ◽

Light Emitting

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Cited By ~ 2

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Cited By ~ 12

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Soft Error ◽

Oxide Semiconductor ◽

Memory Design

Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Cited By ~ 3

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Far Infrared ◽

Oxide Semiconductor ◽

Electronic Detection ◽

Far Infrared Radiation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Empirical implantation damage model and its effect on reverse short channel effect for 0.35 μm complementary metal–oxide–semiconductor technology

10.1116/1.589934 ◽

1998 ◽

Vol 16 (1) ◽

pp. 430

Author(s):

Jongmin Kim

Keyword(s):

Metal Oxide ◽

Damage Model ◽

Oxide Semiconductor ◽

Short Channel ◽

Short Channel Effect ◽

Implantation Damage ◽

Channel Effect

Bit Swapping Linear Feedback Shift Register for Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology

International Journal of Engineering ◽

10.5829/idosi.ije.2017.30.08b.03 ◽

2017 ◽

Keyword(s):

Metal Oxide ◽

Low Power ◽

Shift Register ◽

Oxide Semiconductor ◽

Linear Feedback ◽

Feedback Shift Register ◽

Power Application

Retina for pattern matching in standard 0.6-μm complementary metal oxide semiconductor technology

Journal of Electronic Imaging ◽

10.1117/1.1762886 ◽

2004 ◽

Vol 13 (3) ◽

pp. 559 ◽

Cited By ~ 4

Author(s):

Olivier Aubreton

Keyword(s):

Metal Oxide ◽

Pattern Matching ◽

Oxide Semiconductor ◽

Semiconductor Technology

Monolithic H‐bridge brushless DC vibration motor driver with a highly sensitive Hall sensor in 0.18 μm complementary metal‐oxide semiconductor technology

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2012.0167 ◽

2013 ◽

Vol 7 (4) ◽

pp. 204-210 ◽

Cited By ~ 7

Author(s):

Yue Xu ◽

Hong‐Bin Pan ◽

Shu‐Zhuan He ◽

Li Li

Keyword(s):

Metal Oxide ◽

Hall Sensor ◽

Oxide Semiconductor ◽

Brushless Dc ◽

Highly Sensitive