Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal–oxide–semiconductor fabrication

Mechanical Polishing ◽

Oxide Semiconductor ◽

Trench Isolation ◽

Semiconductor Fabrication

Layout Dependent Induced Leakage and its Prevention with Different Shallow Trench Isolation Schemes in 0.18 µm Dual Gate Complementary Metal Oxide Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.375 ◽

2007 ◽

Vol 46 (1) ◽

pp. 375-377

Author(s):

Seong Yeol Mun ◽

Kyeong Cheol Shin ◽

Sang Bum Huh ◽

Je Il Ju ◽

Jae Yeong Kim ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Trench Isolation ◽

Dual Gate

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology

10.1116/1.3359612 ◽

2010 ◽

Vol 28 (2) ◽

pp. 391-397 ◽

Cited By ~ 3

Author(s):

Chan-Yuan Hu ◽

Jone F. Chen ◽

Shih-Chih Chen ◽

Shoou-Jinn Chang ◽

Shih-Ming Wang ◽

...

Keyword(s):

Metal Oxide ◽

Low Power ◽

Oxide Semiconductor ◽

Isolation Stress ◽

Abnormal Junction Profile of Submicrometer Complementary Metal Oxide Semiconductor Devices with Co Silicidation and Shallow Trench Isolation Processes

Electrochemical and Solid-State Letters ◽

10.1149/1.1403216 ◽

2001 ◽

Vol 4 (11) ◽

pp. G88 ◽

Cited By ~ 2

Author(s):

Chel-Jong Choi ◽

Tae-Yeon Seong ◽

Key-Min Lee ◽

Joo-Hyoung Lee ◽

Young-Jin Park ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology

10.1116/1.589581 ◽

1997 ◽

Vol 15 (6) ◽

pp. 1936 ◽

Cited By ~ 18

Author(s):

A. Chatterjee

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Dual-Workfunction Gate Engineering in a Corner Parasitics-Free Shallow-Trench-Isolation Complementary-Metal-Oxide-Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.2232 ◽

1999 ◽

Vol 38 (Part 1, No. 4B) ◽

pp. 2232-2237 ◽

Cited By ~ 2

Author(s):

Udo Schwalke ◽

Marc Füldner ◽

Walter Zatsch ◽

Katja Bothe ◽

Dariusch Hadawi ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Trench Isolation ◽

Gate Engineering

Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region

Current Applied Physics ◽

10.1016/j.cap.2007.10.086 ◽

2009 ◽

Vol 9 (1) ◽

pp. 9-12 ◽

Cited By ~ 3

Author(s):

Kee-Yeol Na ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

High Performance ◽

Oxide Semiconductor ◽

Drift Region ◽

The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

Chinese Physics Letters ◽

10.1088/0256-307x/31/12/126601 ◽

2014 ◽

Vol 31 (12) ◽

pp. 126601

Author(s):

Jie-Xin Luo ◽

Jing Chen ◽

Zhan Chai ◽

Kai Lü ◽

Wei-Wei He ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Hysteresis Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Field Effects ◽

Trench Isolation ◽

The Impact

Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc21 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC21 ◽

Cited By ~ 1

Author(s):

Yao-Tsung Huang ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Active Length ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Silicon metal–oxide–semiconductor field effect transistor/field emission array fabricated using chemical mechanical polishing

10.1116/1.1527651 ◽

2003 ◽

Vol 21 (1) ◽

pp. 500 ◽

Cited By ~ 8

Author(s):

Ching-yin Hong ◽

Akintunde I. Akinwande

Keyword(s):

Metal Oxide ◽

Field Emission ◽

Chemical Mechanical Polishing ◽

Field Effect ◽

Field Effect Transistor ◽

Mechanical Polishing ◽

Oxide Semiconductor ◽

Effect Transistor

Reproducible Chemical Mechanical Polishing Characteristics of Shallow Trench Isolation Structure using High Selectivity Slurry

Transactions on Electrical and Electronic Materials ◽

10.4313/teem.2002.3.4.005 ◽

2002 ◽

Vol 3 (4) ◽

pp. 5-9

Author(s):

So-Young Jeong ◽

Yong-Jin Seo ◽

Sang-Yong Kim

Keyword(s):

Chemical Mechanical Polishing ◽

High Selectivity ◽

Mechanical Polishing ◽