Study on X-ray Absorption Near Edge Structure of Eu Centers in CaAl2O4:Eu Phosphor Thin Films Prepared by Pulsed Laser Deposition

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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Fabrication of Ni–Al thin films by the pulsed laser deposition technique

Journal of Materials Research ◽

10.1557/jmr.1992.2639 ◽

1992 ◽

Vol 7 (10) ◽

pp. 2639-2642 ◽

Cited By ~ 12

Author(s):

R.K. Singh ◽

Deepika Bhattacharya ◽

S. Sharan ◽

P. Tiwari ◽

J. Narayan

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Rutherford Backscattering Spectrometry ◽

Pulsed Laser ◽

High Energy ◽

Laser Deposition ◽

Nanosecond Laser ◽

X Ray ◽

Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

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X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition

Semiconductor Science and Technology ◽

10.1088/0268-1242/19/11/019 ◽

2004 ◽

Vol 19 (11) ◽

pp. 1322-1324 ◽

Cited By ~ 14

Author(s):

A Erlacher ◽

M Ambrico ◽

V Capozzi ◽

V Augelli ◽

H Jaeger ◽

...

Keyword(s):

Thin Film ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray ◽

X Ray Absorption

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CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

International Journal of Modern Physics B ◽

10.1142/s0217979205028980 ◽

2005 ◽

Vol 19 (01n03) ◽

pp. 533-535

Author(s):

J. H. HAO ◽

J. GAO

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Perovskite Oxide ◽

Deposition Technique ◽

X Ray Diffraction ◽

Rocking Curve ◽

X Ray ◽

Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

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Influence of Post Growth Annealing on the Optical Properties of Gallium Nitride Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/opl.2012.1029 ◽

2012 ◽

Vol 1432 ◽

Author(s):

M. Baseer Haider ◽

M. F. Al-Kuhaili ◽

S. M. A. Durrani ◽

Imran Bakhtiari

Keyword(s):

Thin Films ◽

Gallium Nitride ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Nitrogen Atmosphere ◽

Laser Deposition ◽

Optical Measurements ◽

X Ray ◽

Force Microscopy ◽

Atomic Force

Abstract:Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 oC in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 oC. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

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Photoyield and x-ray-photoelectron spectroscopic studies of O2-annealing effects on SrBi2Ta2O9 thin films prepared by pulsed laser deposition

Journal of Applied Physics ◽

10.1063/1.1592009 ◽

2003 ◽

Vol 94 (3) ◽

pp. 1912-1917 ◽

Cited By ~ 3

Author(s):

M. Takahashi ◽

M. Noda ◽

M. Okuyama

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Spectroscopic Studies ◽

Laser Deposition ◽

X Ray ◽

Annealing Effects

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Growth of Textured Nanocrystalline Cobalt Ferrite Thin Films by Pulsed Laser Deposition

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.an46 ◽

2008 ◽

Vol 8 (8) ◽

pp. 4135-4140 ◽

Cited By ~ 5

Author(s):

Lakshmikanta Aditya ◽

A. Srivastava ◽

S. K. Sahoo ◽

P. Das ◽

C. Mukherjee ◽

...

Keyword(s):

Thin Films ◽

Grain Size ◽

Pulsed Laser Deposition ◽

Cobalt Ferrite ◽

Pulsed Laser ◽

Grazing Incidence ◽

Orientation Distribution ◽

Laser Deposition ◽

X Ray ◽

Ferrite Thin Films

Cobalt ferrite thin films have been deposited on fused quartz substrates by pulsed laser deposition at various substrate temperatures, TS (25 °C, 300 °C, 550 °C and 750 °C). Single phase, nanocrystalline, spinel cobalt ferrite formation is confirmed by X-ray diffraction (XRD) for TS ≥ 300 °C. Conventional XRD studies reveal strong (111) texturing in the as deposited films with TS ≥ 550 °C. Bulk texture measurements using X-ray orientation distribution function confirmed (111) preferred orientation in the films with TS ≥ 550 °C. Grain size (13–16 nm for TS ≥ 300 °C) estimation using grazing incidence X-ray line broadening analysis shows insignificant grain growth with increasing TS, which is in good agreement with grain size data obtained from transmission electron microscopy.

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Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

MRS Proceedings ◽

10.1557/opl.2011.245 ◽

2011 ◽

Vol 1292 ◽

Cited By ~ 3

Author(s):

Nobuyuki Iwata ◽

Mark Huijben ◽

Guus Rijnders ◽

Hiroshi Yamamoto ◽

Dave H. A. Blank

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Layer Growth ◽

Laser Deposition ◽

Growth Mode ◽

Layer By Layer ◽

X Ray Diffraction ◽

Reciprocal Space Mapping ◽

X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

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