Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing

Abstract Devices based on semiconducting nanowires (NWs) are functioning as highly sensitive and selective sensors for the label-free detection of biological and chemical species. This paper demonstrates a novel back-gated silicon NW field effect transistor (NWFET) for gene detection. The fabricated NWFET was employed as the biomolecule sensor for the early, real-time, and label-free screening of hepatitis B virus (HBV) X gene. The DNA fragment in HBV demonstrates the linearity from 10 fM to 1 pM, of which the detection limit is estimated to be about 3.2 fM. The obtained results also show that the NW-based sensor can distinguish the difference between the complementary and 1-base mismatch DNA. The back-gated NW FET exhibits a label-free, highly sensitive, and selective biosensor for gene detection, which also provides a possibility of multiple chemical and biological species detection with sensor array in an integrated chip.

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Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly sensitive electrical detection of DNA hybridization

Nano Research ◽

10.1007/s12274-015-0744-8 ◽

2015 ◽

Vol 8 (7) ◽

pp. 2340-2350 ◽

Cited By ~ 69

Author(s):

Doo-Won Lee ◽

Jinhwan Lee ◽

Il Yung Sohn ◽

Bo-Yeong Kim ◽

Young Min Son ◽

...

Keyword(s):

Dna Hybridization ◽

Field Effect ◽

Field Effect Transistor ◽

Label Free ◽

Electrical Detection ◽

Highly Sensitive ◽

Effect Transistor

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Real-time label-free detection of DNA hybridization using a functionalized graphene field effect transistor: a theoretical study

Journal of Nanoparticle Research ◽

10.1007/s11051-021-05295-1 ◽

2021 ◽

Vol 23 (8) ◽

Author(s):

Sheida Bagherzadeh-Nobari ◽

Reza Kalantarinejad

Keyword(s):

Real Time ◽

Dna Hybridization ◽

Field Effect ◽

Field Effect Transistor ◽

Theoretical Study ◽

Functionalized Graphene ◽

Label Free ◽

Graphene Field Effect Transistor ◽

Label Free Detection ◽

Effect Transistor

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Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽

10.3390/s21124213 ◽

2021 ◽

Vol 21 (12) ◽

pp. 4213

Author(s):

Seong-Kun Cho ◽

Won-Ju Cho

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Silicon On Insulator ◽

Sodium Ion ◽

Ion Sensor ◽

Highly Sensitive ◽

Selective Membrane ◽

Dual Gate ◽

Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

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