Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal–Oxide–Semiconductor Field-Effect Transistors on SiC Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.014104 ◽

2010 ◽

Vol 49 (1) ◽

pp. 014104

Author(s):

Tsu Chang ◽

Hsuan-ling Kao ◽

S. L. Liu ◽

Joseph D. S. Deng ◽

K. Y. Horng ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Power Performance ◽

Lightly Doped Drain ◽

Frequency Power

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Selectively silicided vertical power double-diffused metal–oxide semiconductor field effect transistors for high-frequency power switching applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584170 ◽

1988 ◽

Vol 6 (6) ◽

pp. 1740 ◽

Author(s):

K. Shenai

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Frequency Power ◽

Power Switching ◽

Frequency Power

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Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.034201 ◽

2010 ◽

Vol 49 (3) ◽

pp. 034201

Author(s):

Tsu Chang ◽

Hsuan-ling Kao ◽

Y. J. Chen ◽

Albert Chin

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Radio Frequency Power ◽

Oxide Semiconductor ◽

Power Characteristics ◽

Lightly Doped Drain ◽

Frequency Power

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Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

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Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.918 ◽

2004 ◽

Vol 43 (3) ◽

pp. 918-924 ◽

Author(s):

Kenshi Tada ◽

Toshimasa Matsuoka ◽

Kenji Taniguchi ◽

Kazuhiro Maeda ◽

Tamotsu Sakai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Modeling ◽

Characteristic Extraction ◽

Novel Method ◽

Lightly Doped Drain ◽

Intrinsic Characteristic

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A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) Based on Radio-Frequency Analysis

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.9884 ◽

2014 ◽

Vol 14 (11) ◽

pp. 8219-8224

Author(s):

Jae Hwa Seo ◽

Young Jun Yoon ◽

Hwan Gi Lee ◽

Gwan Min Yoo ◽

Eou-Sik Cho ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Frequency Analysis ◽

Extraction Method ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance Enhancement by Local Strain in Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.5715 ◽

2007 ◽

Vol 46 (9A) ◽

pp. 5715-5718

Author(s):

Wen-Cheng Lo ◽

Ya-Hsin Kuo ◽

Yao-Jen Lee ◽

Tien-Sheng Chao ◽

Chun-Yen Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Local Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Hot-carrier effects on radio frequency noise characteristics of LDDn-type metal–oxide–semiconductor field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.582176 ◽

2000 ◽

Vol 18 (2) ◽

pp. 765-769 ◽

Author(s):

W. S. Kwan ◽

C. H. Chen ◽

M. J. Deen

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Hot Carrier ◽

Noise Characteristics ◽

Hot Carrier Effects

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A Physics-Based Short-Channel Current-Voltage Model for Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.3448 ◽

1997 ◽

Vol 36 (Part 1, No. 6A) ◽

pp. 3448-3459 ◽

Author(s):

Man-Chun Hu ◽

Sheng-Lyang Jang ◽

Chwan-Gwo Chyau

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Channel Current ◽

Current Voltage ◽

Lightly Doped Drain

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Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques

Nanoscale Research Letters ◽

10.1186/1556-276x-9-242 ◽

2014 ◽

Vol 9 (1) ◽

Author(s):

Hsin-Ying Lee ◽

Hung-Lin Huang ◽

Chun-Yen Tseng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Laser Interference

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