Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor

2010 ◽  
Vol 49 (3) ◽  
pp. 034201
Author(s):  
Tsu Chang ◽  
Hsuan-ling Kao ◽  
Y. J. Chen ◽  
Albert Chin
Keyword(s):  
Metal Oxide ◽  
Radio Frequency ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Radio Frequency Power ◽  
Oxide Semiconductor ◽  
Power Characteristics ◽  
Lightly Doped Drain ◽  
Frequency Power

scholarly journals Manufacturing and Testing of Radio Frequency MEMS Switches Using the Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1396
Author(s):  
Zung-You Tsai ◽  
Po-Jen Shih ◽  
Yao-Chuan Tsai ◽  
Ching-Liang Dai
Keyword(s):  
Metal Oxide ◽  
Radio Frequency ◽  
Oxide Layer ◽  
Coplanar Waveguide ◽  
Actuation Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Post Process

A radio frequency microelectromechanical system switch (MSS) manufactured by the complementary metal oxide semiconductor (CMOS) process is presented. The MSS is a capacitive shunt type. Structure for the MSS consists of coplanar waveguide (CPW) lines, a membrane, and springs. The membrane locates over the CPW lines. The surface of signal line for the CPW has a silicon dioxide dielectric layer. The fabrication of the MSS contains a CMOS process and a post-process. The MSS has a sacrificial oxide layer after the CMOS process. In the post-processing, a wet etching of buffer oxide etch (BOE) etchant is employed to etch the sacrificial oxide layer, so that the membrane is released. Actuation voltage for the MSS is simulated using the CoventorWare software. The springs have a low stiffness, so that the actuation voltage reduces. The measured results reveal that actuation voltage for the MSS is 10 V. Insertion loss for the MSS is 0.9 dB at 41 GHz and isolation for the MSS is 30 dB at 41 GHz.

Sign in / Sign up

Export Citation Format

Share Document