Effect of DC Bias Voltage on the Characteristics of Low Temperature Silicon–Nitride Films Deposited by Internal Linear Antenna Inductively Coupled Plasma Source

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

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Role of hydrogen on the deposition and properties of fluorinated silicon-nitride films prepared by inductively coupled plasma enhanced chemical vapor deposition using SiF4∕N2∕H2 mixtures

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1854693 ◽

2005 ◽

Vol 23 (2) ◽

pp. 248-255 ◽

Cited By ~ 7

Author(s):

J. Fandiño ◽

G. Santana ◽

L. Rodríguez-Fernández ◽

J. C. Cheang-Wong ◽

A. Ortiz ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Inductively Coupled Plasma ◽

Chemical Vapor ◽

Inductively Coupled ◽

Silicon Nitride Films

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Zirconia Coatings Deposited by Inductively Coupled Plasma Assisted CVD

MRS Proceedings ◽

10.1557/proc-555-191 ◽

1998 ◽

Vol 555 ◽

Author(s):

P. Colpo ◽

G. Ceccone ◽

B. Leclercq ◽

P. Salvatore ◽

F. Rossi

Keyword(s):

Thin Films ◽

Bias Voltage ◽

Inductively Coupled Plasma ◽

Gas Mixture ◽

Negative Bias ◽

Negative Bias Voltage ◽

Inductively Coupled ◽

Deposition Parameters ◽

Coating Characteristics ◽

Dc Bias

AbstractThin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD (ICP-PACVD) reactor from tetra (tert-butoxy)-zircon precursor diluted in Ar and O2 gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed.

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