scholarly journals Effect of surface condition on diffusion in thin films at low temperatures. Report No. 3026

1978 ◽  
Author(s):  
J. C.M. Hwang ◽  
P. S. Ho ◽  
R. W. Balluffi
1978 ◽  
Vol 33 (5) ◽  
pp. 458-461 ◽  
Author(s):  
J. C. M. Hwang ◽  
P. S. Ho ◽  
R. W. Balluffi

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1753-C8-1754
Author(s):  
H. Sakakima ◽  
M. Tessier ◽  
R. Krishnan ◽  
E. Hirota

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).


2010 ◽  
Vol 173 (1-3) ◽  
pp. 267-270 ◽  
Author(s):  
Ken-ichi Katsumata ◽  
Christopher E.J. Cordonier ◽  
Tetsuya Shichi ◽  
Akira Fujishima

2013 ◽  
Author(s):  
Lu Huang ◽  
Jing Jin ◽  
Guohua Wang ◽  
Weimin Shi ◽  
Weiguang Yang ◽  
...  

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