Preparation and Electrical Characterization of CeO$_{2}$ Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.10pa06 ◽

2011 ◽

Vol 50 (10) ◽

pp. 10PA06 ◽

Author(s):

Miyuki Kouda ◽

Kenji Ozawa ◽

Kuniyuki Kakushima ◽

Parhat Ahmet ◽

Hiroshi Iwai ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Comparative Study ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Electrical Characterization ◽

Chemical Vapor ◽

Atomic Layer ◽

Layer Deposition ◽

Deposition Processes

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Preparation and Electrical Characterization of CeO2Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.10pa06 ◽

2011 ◽

Vol 50 (10S) ◽

pp. 10PA06 ◽

Author(s):

Miyuki Kouda ◽

Kenji Ozawa ◽

Kuniyuki Kakushima ◽

Parhat Ahmet ◽

Hiroshi Iwai ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Comparative Study ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Electrical Characterization ◽

Chemical Vapor ◽

Atomic Layer ◽

Layer Deposition ◽

Deposition Processes

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Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation

IEICE Transactions on Electronics ◽

10.1093/ietele/e88-c.4.640 ◽

2005 ◽

Vol E88-C (4) ◽

pp. 640-645 ◽

Author(s):

H. MURAKAMI

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Electrical Characterization ◽

Chemical Vapor ◽

Layer By Layer ◽

Aluminum Oxynitride ◽

Thermal Nitridation

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Electrical Characterization of Ti–Silicate Films Grown by Atomic Layer Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.5259 ◽

2007 ◽

Vol 46 (8A) ◽

pp. 5259-5263 ◽

Author(s):

Seungjae Lee ◽

Kijung Yong

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electrical Characterization ◽

Chemical Vapor ◽

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Electrical Properties of CeO$_{2}$/La$_{2}$O$_{3}$ Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.121101 ◽

2012 ◽

Vol 51 ◽

pp. 121101 ◽

Author(s):

Miyuki Kouda ◽

Takuya Suzuki ◽

Kuniyuki Kakushima ◽

Parhat Ahmet ◽

Hiroshi Iwai ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Atomic Layer Deposition ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Chemical Vapor ◽

Atomic Layer ◽

Layer Deposition

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Multiscale plasma and feature profile simulations of plasma-enhanced chemical vapor deposition and atomic layer deposition processes for titanium thin film fabrication

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab5bc9 ◽

2020 ◽

Vol 59 (SH) ◽

pp. SHHB02

Author(s):

Kazuki Denpoh ◽

Paul Moroz ◽

Taiki Kato ◽

Masaaki Matsukuma

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Thin Film Fabrication ◽

Titanium Thin Film ◽

Layer Deposition ◽

Film Fabrication ◽

Deposition Processes

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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4769207 ◽

2013 ◽

Vol 31 (1) ◽

pp. 01A134 ◽

Author(s):

Jiro Yota ◽

Hong Shen ◽

Ravi Ramanathan

Keyword(s):

Chemical Vapor Deposition ◽

Atomic Layer Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal

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Atomic Layer Chemical Vapor Deposition and Electrical Characterization of Hafnium Silicate Films

Journal of The Electrochemical Society ◽

10.1149/1.1869977 ◽

2005 ◽

Vol 152 (4) ◽

pp. F45 ◽

Author(s):

Jaehyun Kim ◽

Kijung Yong

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electrical Characterization ◽

Chemical Vapor ◽

Atomic Layer ◽

Hafnium Silicate

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Electrical Properties of CeO2/La2O3Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.121101 ◽

2012 ◽

Vol 51 (12R) ◽

pp. 121101 ◽

Author(s):

Miyuki Kouda ◽

Takuya Suzuki ◽

Kuniyuki Kakushima ◽

Parhat Ahmet ◽

Hiroshi Iwai ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Atomic Layer Deposition ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Chemical Vapor ◽

Atomic Layer ◽

Layer Deposition

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Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation

10.7567/ssdm.2002.b-7-1 ◽

2002 ◽

Author(s):

Hideki MURAKAMI ◽

Wataru MIZUBAYASHI ◽

Hirokazu YOKOI ◽

Atsushi SUYAMA ◽

Seiichi MIYAZAKI

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gate Dielectrics ◽

Electrical Characterization ◽

Chemical Vapor ◽

Layer By Layer ◽

Aluminum Oxynitride ◽

Thermal Nitridation

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Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes

Materials Chemistry and Physics ◽

10.1016/0254-0584(91)90073-4 ◽

1991 ◽

Vol 28 (4) ◽

pp. 379-388 ◽

Author(s):

L. Hiltunen ◽

H. Kattelus ◽

M. Leskelä ◽

M. Mäkelä ◽

L. Niinistö ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Aluminium Oxide ◽

Chemical Vapor ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Deposition Processes ◽

Source Materials

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