Simultaneous optimization of total power, crosstalk noise, and delay under uncertainty

2008 ◽  
Author(s):  
N. Ranganathan ◽  
U. Gupta ◽  
V. Mahalingam
Keyword(s):  
Simultaneous Optimization ◽  
Total Power ◽  
Crosstalk Noise

Dynamically Pulsed MTCMOS With Bus Encoding for Reduction of Total Power and Crosstalk Noise

2010 ◽  
Vol 18 (1) ◽  
pp. 166-170 ◽  
Author(s):  
Harmander Singh ◽  
Rahul Rao ◽  
Kanak Agarwal ◽  
Dennis Sylvester ◽  
Richard Brown
Keyword(s):  
Total Power ◽  
Crosstalk Noise ◽  
Bus Encoding

Materials Issues and Characterization of Low-k Dielectric Materials

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 49-54 ◽  
Author(s):  
E. Todd Ryan ◽  
Andrew J. McKerrow ◽  
Jihperng Leu ◽  
Paul S. Ho
Keyword(s):  
Process Integration ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Thermomechanical Properties ◽  
General Criterion ◽  
Crosstalk Noise ◽  
Total Delay ◽  
Interlayer Dielectrics ◽  
Performance Improvements ◽  
And Performance

Continuing improvement in device density and performance has significantly affected the dimensions and complexity of the wiring structure for on-chip interconnects. These enhancements have led to a reduction in the wiring pitch and an increase in the number of wiring levels to fulfill demands for density and performance improvements. As device dimensions shrink to less than 0.25 μm, the propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant. Accordingly the interconnect delay now constitutes a major fraction of the total delay limiting the overall chip performance. Equally important is the processing complexity due to an increase in the number of wiring levels. This inevitably drives cost up by lowering the manufacturing yield due to an increase in defects and processing complexity.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILDs) and alternative architectures have surfaced to replace the current Al(Cu)/SiO2 interconnect technology. These alternative architectures will require the introduction of low-dielectric-constant k materials as the interlayer dielectrics and/or low-resistivity conductors such as copper. The electrical and thermomechanical properties of SiO2 are ideal for ILD applications, and a change to material with different properties has important process-integration implications. To facilitate the choice of an alternative ILD, it is necessary to establish general criterion for evaluating thin-film properties of candidate low-k materials, which can be later correlated with process-integration problems.

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho
Keyword(s):  
Packing Density ◽  
Propagation Delay ◽  
Single Chip ◽  
Crosstalk Noise ◽  
Metal Line ◽  
Total Delay ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Interconnect Technology

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

LOW-COST TOTAL POWER RADIOMETER USING CONVENTIONAL DTH ANTENNA

2020 ◽  
Vol 79 (16) ◽  
pp. 1479-1487
Author(s):  
Samarendra Nath Sur ◽  
A. K. Singh ◽  
P. Chettri ◽  
R. Bera
Keyword(s):  
Low Cost ◽  
Total Power

Determination of Combined and Second Order Factor Effects for Simultaneous Optimization of Physical and Mechanical Properties of NR/BR Blend System

2014 ◽  
Vol 42 (4) ◽  
pp. 290-304
Author(s):  
Rajarajan Aiyengar ◽  
Jyoti Divecha
Keyword(s):  
Physical And Mechanical Properties ◽  
Second Order ◽  
Simultaneous Optimization ◽  
Order Effects ◽  
Elongation At Break ◽  
Five Factors ◽  
Rubber Compounds ◽  
Polybutadiene Rubber ◽  
Contour Plots

ABSTRACT The blends of natural rubber (NR), polybutadiene rubber (BR), and other forms of rubbers are widely used for enhancing the mechanical and physical properties of rubber compounds. Lots of work has been done in conditioning and mixing of NR/BR blends to improve the properties of its rubber compounds and end products such as tire tread. This article employs response surface methodology designed experiments in five factors; high abrasion furnace carbon black (N 330), aromatic oil, NR/BR ratio, sulfur, and N-oxydiethylene-2-benzothiazole sulfenamide for determination of combined and second order effects of the significant factors leading to simultaneous optimization of the NR/BR blend system. One of the overall optimum of eight properties existed at carbon 44 phr, oil 6.1 phr, NR/BR 78/22 phr with the following values of properties: tensile strength (22 MPa), elongation at break (528%), tear resistance (30 kg/mm), rebound resilience (67%), moderate hardness (68 International rubber hardness degrees) with low heat buildup (17 °C), permanent set (12%), and abrasion loss (57 mm3). More optimum combinations can easily be determined from the NR/BR blend system models contour plots.

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