scholarly journals An energy efficient cache design using spin torque transfer (STT) RAM

Author(s):  
Mitchelle Rasquinha ◽  
Dhruv Choudhary ◽  
Subho Chatterjee ◽  
Saibal Mukhopadhyay ◽  
Sudhakar Yalamanchili
2013 ◽  
Vol 22 (05) ◽  
pp. 1350038 ◽  
Author(s):  
TIEFEI ZHANG ◽  
TIANZHOU CHEN ◽  
JIANZHONG WU ◽  
YOUTIAN QU

Due to its low leakage power and high density, spin torque transfer RAM (STT-RAM) has become a good candidate for future on-chip cache. However, STT-RAM suffers from higher write energy compared to the SRAM. One state-of-the-art technique to alleviate this problem is read-before-write (RBW). In this paper, we study the pattern of the write accesses to the L2 cache and show that directly applying the RBW to a STT-RAM L2 cache can be problematic from energy perspective. We then propose a selective read-before-write (SRW) scheme to further reduce the dynamic write energy of the STT-RAM cache. Additional optimizations are included in the design of SRW so that it can save a considerable amount of energy at negligible overheads. The experimental results show that SRW achieves a 86.0% reduction in write energy consumption vs. a baseline without any write optimization techniques, and a 6.55% more reduction compared to the RBW scheme.


2013 ◽  
Vol 26 (3) ◽  
pp. 227-238
Author(s):  
Thomas Windbacher ◽  
Hiwa Mahmoudi ◽  
Alexander Makarov ◽  
Viktor Sverdlov ◽  
Siegfried Selberherr

We summarize our recent work on a non-volatile logic building block required for energy-efficient information processing systems. A sequential logic device, in particular, an alternative non-volatile magnetic flip-flop has been introduced. Its properties are investigated and its extension to a very dense shift register is demonstrated. We show that the flip-flop structure inherently exhibits oscillations and discuss its spin torque nano-oscillator properties.


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