Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget

2014 ◽  
Vol 61 (4) ◽  
pp. 271-280 ◽  
Author(s):  
M. K. Bera ◽  
Y. Liu ◽  
L. M. Kyaw ◽  
Y. J. Ngoo ◽  
S. P. Singh ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Thermal Budget ◽  
Cmos Compatible ◽  
And Performance ◽  
Gan On Si ◽  
Low Thermal Budget

Ultra Low Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low Temperature Processed Si/SiO2 Structures by A 900°C 30 Second Rapid Thermal Anneal

1997 ◽  
Vol 470 ◽  
Author(s):  
G. Lucovsky ◽  
B. Hinds
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Rapid Thermal Anneal ◽  
Thermal Budget ◽  
Kinetic Effects ◽  
C 30 ◽  
Thin Gate Oxide ◽  
Low Thermal Budget

ABSTRACTDevice quality gate dielectric heterostructures have been prepared using a three step plasma/rapid thermal sequence [1] in which kinetic effects determine the time-temperature aspects of the processing. The steps for forming the interface and for depositing dielectric layers have been performed at low temperature, ∼300°C, by plasma-assisted processing. Following this a low rapid thermal anneal (RTA) provides interface and bulk dielectric chemical and structural relaxations, thereby yielding device performance and reliability essentially the same as obtained using higher thermal budget conventional or rapid thermal processing.

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