Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate
Dielectric Using Gate-First CMOS Compatible Process at Low Thermal
Budget
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Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage
2014 ◽
Vol 32
(3)
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pp. 032201
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2004 ◽
Vol 51
(11)
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pp. 1877-1882
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1995 ◽
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2008 ◽
Vol 155
(8)
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pp. G159
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