Impact of Native Oxide Growth on the Capacitance-Voltage Characteristic of Pseudo-MOS Structure

Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes have been fabricated. Test HBV diodes demonstrate capacitance-voltage characteristics with cosine shape at bias voltage up to two volts, increased capacitance ratio and low leakage current values.

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Effect of deep traps on the low-frequency capacitance-voltage characteristic of selectively doped Al/sub x/Ga/sub 1-x/As/GaAs heterostructures

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) ◽

10.1109/icsict.1998.785976 ◽

2002 ◽

Author(s):

N.B. Gorev ◽

I.F. Kodzespirova ◽

S.A. Kostylev ◽

Yu.A. Kovalenko ◽

E.F. Prokhorov

Keyword(s):

Low Frequency ◽

Voltage Characteristic ◽

Deep Traps ◽

Capacitance Voltage

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Analysis of the Method for the Flat-Band Voltage Determination on the Capacitance-Voltage Characteristic Inflection Point

2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) ◽

10.1109/edm.2019.8823556 ◽

2019 ◽

Author(s):

Vladimir G. Polovinkin ◽

Nikita I. Lysenko

Keyword(s):

Inflection Point ◽

Voltage Characteristic ◽

Flat Band ◽

Flat Band Voltage ◽

Capacitance Voltage

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The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface

MRS Proceedings ◽

10.1557/proc-259-405 ◽

1992 ◽

Vol 259 ◽

Cited By ~ 2

Author(s):

Y. Ishimaru ◽

M. Yoshiki ◽

T. Hatanaka

Keyword(s):

Silicon Wafer ◽

Silicon Surface ◽

Dopant Concentration ◽

Oxide Thickness ◽

Native Oxide ◽

Wafer Surface ◽

Oxide Growth ◽

X Ray ◽

Silicon Bulk ◽

P Type

ABSTRACTThe effects of dopant type and dopant concentration on the native oxide growth in air on the silicon surface were investigated. The oxide thickness was measured by X-ray photoelectron spectrometry (XPS). The oxide was thicker on n-type Si than on p-type Si in early oxidation. The oxide increased linearly with the dopant concentration. This enhancement of oxidation was assumed to be caused by vacancies near the surface in the silicon bulk.

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