Impact of Native Oxide on the Capacitance-Voltage Characteristic of Pseudo-Mos Structure

2017 ◽  
Keyword(s):  
Voltage Characteristic ◽  
Native Oxide ◽  
Mos Structure ◽  
Capacitance Voltage

scholarly journals Гетеробарьерные варакторы с неоднородно легированными модулирующими слоями

2019 ◽  
Vol 45 (20) ◽  
pp. 51
Author(s):  
Н.А. Малеев ◽  
М.А. Бобров ◽  
А.Г. Кузьменков ◽  
А.П. Васильев ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Numerical Model ◽  
Leakage Current ◽  
Molecular Beam ◽  
Voltage Characteristic ◽  
Doping Profile ◽  
Published Data ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Inp Substrate ◽  
Capacitance Voltage

Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes have been fabricated. Test HBV diodes demonstrate capacitance-voltage characteristics with cosine shape at bias voltage up to two volts, increased capacitance ratio and low leakage current values.

Capacitance-voltage characteristic of mis structures with allowance for depletion

1996 ◽  
Vol 39 (5) ◽  
pp. 414-418
Author(s):  
V. S. Slavnikov ◽  
N. S. Nesmelov ◽  
M. M. Slavnikova
Keyword(s):  
Voltage Characteristic ◽  
Capacitance Voltage ◽  
Mis Structures

Silicon Nanocrystalline Nonvolatile Memory - Characterization and Analysis

2016 ◽  
Vol 39 ◽  
pp. 134-150
Author(s):  
Valerii Ievtukh ◽  
A. Nazarov
Keyword(s):  
Nonvolatile Memory ◽  
Silicon Nanocrystals ◽  
Memory Window ◽  
Experimental Results ◽  
Memory Devices ◽  
Mos Capacitor ◽  
Mos Structure ◽  
Capacitance Voltage ◽  
Nonvolatile Memory Devices ◽  
Bipolar Memory

In this work, nanocrystal nonvolatile memory devices comprising of silicon nanocrystals located in gate oxide of MOS structure, were comprehensively studied on specialized modular data acquisition setup developed for capacitance-voltage measurements. The memory window formation, memory window retention and charge relaxation experimental methods were used to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory. The trapping/emission processes were studied in standard bipolar memory mode and in new unipolar memory mode, which is specific for nanocrystalline nonvolatile memory. The analysis of experimental results shown that unipolar programming mode is more favourable for nanocrystalline memory operation due to lower wearing out and higher breakdown immunity of the MOS device’s oxide. The study was performed for two types of nanocrystalline memory devices: with one and two silicon nanocrystalline 2D layers in oxide of MOS structure correspondingly. The electrostatic modelling was presented to explain the experimental results.

Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C

2012 ◽  
Vol 717-720 ◽  
pp. 1187-1189
Author(s):  
Ruby N. Ghosh ◽  
Reza Loloee
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Gate Oxide ◽  
Voltage Characteristic ◽  
Capacitive Sensors ◽  
Large Area ◽  
Signal Noise ◽  
Capacitance Voltage ◽  
Corrosive Environments

SiC based capacitive devices have the potential to operate in high temperature, chemically corrosive environments provided that the electrical integrity of the gate oxide and metallization can be maintained in these environments. We report on the performance of large area, up to 8 x 10-3 cm2, field-effect capacitive sensors fabricated on both the 4H and 6H polytypes at 600°C. Large area capacitors improve the signal/noise (S/N) ratio which is proportional to the slope of the capacitance-voltage characteristic. At 600 °C we obtain a S/N ~ 20. The device response is independent of polytype, either 4H or 6H-SiC. These results demonstrate the reliability of our field-effect structure, operating as a simple potentiometer at high temperature.

Sign in / Sign up

Export Citation Format

Share Document