Effect of deep traps on the low-frequency capacitance-voltage characteristic of selectively doped Al/sub x/Ga/sub 1-x/As/GaAs heterostructures

2002 ◽  
Author(s):  
N.B. Gorev ◽  
I.F. Kodzespirova ◽  
S.A. Kostylev ◽  
Yu.A. Kovalenko ◽  
E.F. Prokhorov
Keyword(s):  
Low Frequency ◽  
Voltage Characteristic ◽  
Deep Traps ◽  
Capacitance Voltage

PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE

2004 ◽  
Vol 14 (03) ◽  
pp. 775-784
Author(s):  
NIKOLAI B. GOREV ◽  
INNA F. KODZHESPIROVA ◽  
EVGENY N. PRIVALOV ◽  
NINA KHUCHUA ◽  
LEVAN KHVEDELIDZE ◽  
...  
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Epitaxial Film ◽  
Low Frequency ◽  
Physical Mechanisms ◽  
Deep Traps ◽  
Barrier Capacitance ◽  
Capacitance Voltage ◽  
Positive Peak ◽  
Film Substrate

The results of analytical and numerical calculations of the low-frequency and the high-frequency barrier capacitance of GaAs epitaxial and ion-implanted structures fabricated on a semi-insulating compensated substrate are presented. The calculations are done for the samples in the dark and under extrinsic illumination. It is shown that the high-frequency photocapacitance of these structures exhibits a narrow peak, and the low-frequency photocapacitance has a positive peak followed by a negative valley. The underlying physical mechanisms are discussed. Methods for predicting the MESFET threshold voltage and extracting the concentration of vacant deep traps in the vicinity of the film–substrate interface and the epitaxial film thickness using capacitance–voltage measurements under extrinsic illumination are proposed.

scholarly journals Гетеробарьерные варакторы с неоднородно легированными модулирующими слоями

2019 ◽  
Vol 45 (20) ◽  
pp. 51
Author(s):  
Н.А. Малеев ◽  
М.А. Бобров ◽  
А.Г. Кузьменков ◽  
А.П. Васильев ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Numerical Model ◽  
Leakage Current ◽  
Molecular Beam ◽  
Voltage Characteristic ◽  
Doping Profile ◽  
Published Data ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Inp Substrate ◽  
Capacitance Voltage

Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes have been fabricated. Test HBV diodes demonstrate capacitance-voltage characteristics with cosine shape at bias voltage up to two volts, increased capacitance ratio and low leakage current values.

scholarly journals Влияние нейтронного облучения на спектр дефектов с глубокими уровнями в GaAs, изготовленном методом жидкофазной эпитаксии в атмосфере водорода и аргона

2022 ◽  
Vol 56 (1) ◽  
pp. 53
Author(s):  
М.М. Соболев ◽  
Ф.Ю. Солдатенков
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Experimental Studies ◽  
Shallow Donor ◽  
Defect Clusters ◽  
Deep Traps ◽  
Capacitance Voltage ◽  
Before And After ◽  
Transient Spectroscopy ◽  
Different Doses

The results of experimental studies of capacitance– voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900C from one solution–melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance–voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+−p0−i−n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.

scholarly journals Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
M. R. Balboul ◽  
A. Abdel-Galil ◽  
I. S. Yahia ◽  
A. Sharaf
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Electrical Response ◽  
Charge Carrier Concentration ◽  
Flat Band ◽  
Voltage Measurement ◽  
Deep Traps ◽  
Cds Thin Film ◽  
Depth Analysis ◽  
Capacitance Voltage

Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose ofγ-irradiation increases the activation energy of CdS thin film. In addition,γ-irradiation was used to change the sign of Hall coefficient,RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change afterγ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap afterγ-irradiation. Several parameters were also studied such as charge carrier concentration,ND, and flat band potential,Vfb. Theγ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

2007 ◽  
Vol 91 (23) ◽  
pp. 232116 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. V. Govorkov ◽  
A. V. Markov ◽  
A. M. Dabiran ◽  
...  
Keyword(s):  
Deep Traps ◽  
Capacitance Voltage ◽  
Gan Heterostructure

Low- and High-Frequency C–V Characteristics of Au/n-GaN/n-GaAs

2018 ◽  
Vol 18 (06) ◽  
pp. 1850039
Author(s):  
Abderrezzaq Ziane ◽  
Mohamed Amrani ◽  
Abdelaziz Rabehi ◽  
Zineb Benamara
Keyword(s):  
Schottky Diode ◽  
High Frequency ◽  
High Vacuum ◽  
Low Frequency ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Ultra High Vacuum ◽  
Active Nitrogen ◽  
Capacitance Voltage

Au/GaN/GaAs Schottky diode created by the nitridation of n-GaAs substrate which was exposed to a flow of active nitrogen created by a discharge source with high voltage in ultra-high vacuum with two different thicknesses of GaN layers (0.7[Formula: see text]nm and 2.2[Formula: see text]nm), the I–V and capacitance–voltage (C–V) characteristics of the Au/n-GaN/n-GaAs structures were studied for low- and high-frequency at room temperature. The measurements of I–V of the Au/n-GaN/n-GaAs Schottky diode were found to be strongly dependent on bias voltage and nitridation process. The electrical parameters are bound by the thickness of the GaN layer. The capacitance curves depict a behavior indicating the presence of interface state density, especially in the low frequency. The interface states density was calculated using the high- and low-frequency capacitance curves and it has been shown that the interface states density decreases with increasing of nitridation of the GaAs.

Capacitance-voltage characteristic of mis structures with allowance for depletion

1996 ◽  
Vol 39 (5) ◽  
pp. 414-418
Author(s):  
V. S. Slavnikov ◽  
N. S. Nesmelov ◽  
M. M. Slavnikova
Keyword(s):  
Voltage Characteristic ◽  
Capacitance Voltage ◽  
Mis Structures
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