The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface

1992 ◽  
Vol 259 ◽  
Author(s):  
Y. Ishimaru ◽  
M. Yoshiki ◽  
T. Hatanaka
Keyword(s):  
Silicon Wafer ◽  
Silicon Surface ◽  
Dopant Concentration ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Wafer Surface ◽  
Oxide Growth ◽  
X Ray ◽  
Silicon Bulk ◽  
P Type

ABSTRACTThe effects of dopant type and dopant concentration on the native oxide growth in air on the silicon surface were investigated. The oxide thickness was measured by X-ray photoelectron spectrometry (XPS). The oxide was thicker on n-type Si than on p-type Si in early oxidation. The oxide increased linearly with the dopant concentration. This enhancement of oxidation was assumed to be caused by vacancies near the surface in the silicon bulk.

Layer-by-Layer Oxidation of Silicon

1991 ◽  
Vol 222 ◽  
Author(s):  
T. Yasaka ◽  
M. Takakura ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxidation Rate ◽  
Pure Water ◽  
Oxygen Adsorption ◽  
Native Oxide ◽  
Oxide Growth ◽  
Layer By Layer ◽  
X Ray ◽  
P Type ◽  
Kinetics Of

ABSTRACTGrowth kinetics of native oxide on HF-treated Si surfaces terminated with Si-H bonds has been studied by angle-resolved x-ray photoelectron spectroscopy. The oxide growth rate in pure water for an n+ Si(100) surface is significantly high compared to that of p+, and the n or p type Si oxidation rate is in between. This is explained by the formation of ions through electron transfer from Si to adsorbed O2 molecules and the resulting enhancement of the oxidation rate. The oxide growth on Si(100) is faster than (110) and (111) as interpreted in terms of the steric hindrance for molecular oxygen adsorption on the hydrogen terminated silicon 1×1 surface structures.

Native Oxide Growth Behavior on Silicon Surface with Various Resistivity in Ultrapure Water and CuF2 Solution

1997 ◽  
Vol 477 ◽  
Author(s):  
Katsuyuki Sekine ◽  
Geun-Min Choi ◽  
Yuji Saito ◽  
Tadahiro Ohmi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surface ◽  
Pure Water ◽  
Oxide Thickness ◽  
Growth Behavior ◽  
Native Oxide ◽  
Oxide Growth ◽  
Ultrapure Water ◽  
Relationship Of ◽  
The Relationship

ABSTRACTWe have studied native oxide growth behavior on silicon surface with various resistivity in ultra pure water (UPW), SPM (sulfuric acid-hydrogen peroxide mixture, H2SO4:H2O2 = 4:1) cleaning and UPW contaminated with CuF2 by X-Ray photoelectron spectroscopy (XPS). The results show that the native oxide growth behavior in UPW is different from that in UPW contaminated with CuF2 and that grown by SPM cleaning. Native oxide thickness grown in UPW depends on resistivity. Native oxide thickness grown during SPM cleaning has the relationship of steric hinderance effect. However, in CuF2 solution, native oxide thickness is more influenced by the redox reaction between Cu ions and silicon atoms.

Iron Deposition From SC-1 on Silicon Wafer Surfaces

1995 ◽  
Vol 386 ◽  
Author(s):  
S. Dhanda ◽  
C. R. Helms ◽  
P. Gupta ◽  
B. B. Triplett ◽  
M. Tran
Keyword(s):  
Oxide Film ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Room Temperature ◽  
Native Oxide ◽  
Wafer Surface ◽  
Initial Surface ◽  
Thermal Oxide ◽  
Wide Range ◽  
Wafer Surfaces

ABSTRACTThis work examines the extent of the deposition of iron on the wafer from (iron) contaminated SC-1 solutions on silicon wafer surfaces, models this effect, and also predicts the chemical state of the iron thus deposited on the wafer surface. The deposition of iron from SC-1 on three different wafer surface terminations was studied. The surfaces were characterized by: (i) the presence of ∼10 Å of native oxide, (ii) by relatively little native oxide and (iii) by a thick thermal oxide. Experiments were performed at room temperature using a 1:1:5 SC-1 (NH4 OH-H2O2-H2O) solution, and also at 80°C with a more dilute composition (0.25:0.5:5). We found that irrespective of the initial surface termination, the amount of iron deposited on the silicon surface from SC-1 exhibited remarkably little deviation over a wide range of spiking levels, leading to the conclusion that in all cases an initial rapid oxidation of the silicon took place, followed by the preferential oxidation of the iron and its inclusion as the oxide into the oxide film. Finally, the model developed predicts that lower temperatures and more concentrated chemistries are more effective in keeping the iron in solution.

Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Corradi ◽  
E. Borzoni ◽  
P. Godio ◽  
G. Borionetti
Keyword(s):  
Experimental Design ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Quality Performance ◽  
Wafer Cleaning ◽  
Silicon Wafer Surface

ABSTRACTThe effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

X-ray Reflectivity Study of an Amphiphilic Hexa-peri-hexabenzocoronene at a Structured Silicon Wafer Surface

Langmuir ◽  
2003 ◽  
Vol 19 (26) ◽  
pp. 10997-10999 ◽  
Author(s):  
Stephan Kubowicz ◽  
Andreas F. Thünemann ◽  
Thomas M. Geue ◽  
Ullrich Pietsch ◽  
Mark D. Watson ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Wafer Surface ◽  
X Ray ◽  
Silicon Wafer Surface

X-Ray Diffraction Microscopy of Planar Diffused Junction Structures

1966 ◽  
Vol 10 ◽  
pp. 118-133 ◽  
Author(s):  
J. K. Howard ◽  
G. H. Schwuttke
Keyword(s):  
Silicon Oxide ◽  
Wafer Surface ◽  
X Ray Diffraction ◽  
Diffraction Intensity ◽  
Elastic Deformations ◽  
X Ray ◽  
Silicon Devices ◽  
Planar Silicon ◽  
P Type ◽  
Processing Steps

AbstractBasic processing steps utilized in the fabrication of planar silicon devices include (a) substrate preparation, (b) epitaxial deposition, (c) thermal gvowth of silicon dioxide over the entire silicon wafer surface, (d) device pattern formation by photoetching techniques, and (e) diffusion of n-type or p-type elements through the holes to produce localized regions of desired conductivity, A detailed study of the various diffraction phenomena associated with such structures is presented. X-ray topographs of planar transistors show distinct contrast features such as excess diffraction intensity along the silicon oxide/silicon boundary and/or excess diffraction intensity inside the device area. The diffraction phenomena are discussed in terms of reversible elastic deformations, frozen-in lattice deformations, strain fields and imperfections generated by the various processing steps. A technique is presented to measure the sign of the elastic deformations. The phenomenon of stressjumping across semiconductors interfaces is described, and finally the implications of stress-strain relations on junction performance are stated.

Femtosecond Laser-Induced Silicon Surface Morphology in Water

2008 ◽  
Author(s):  
Yukun Han ◽  
Cheng-Hsiang Lin ◽  
Hai-Lung Tsai
Keyword(s):  
Femtosecond Laser ◽  
Surface Morphology ◽  
Surface Quality ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Periodic Structures ◽  
Industrial Applications ◽  
Silicon Surfaces ◽  
Wafer Surface ◽  
Laser Parameter

This article investigates the use of femtosecond laser induced surface morphology on silicon wafer surface in water confinement. Unlike irradiation of silicon surfaces in the air, there are no laser induced periodic structures, but irregular roughness is formed when the silicon wafer is ablated under water. The unique discovery of a smoothly processed silicon surface in water confinement under certain laser parameter combinations may help improve laser direct micromachining surface quality in industrial applications.

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