In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment

Plasma damage and metal ion penetration are critical issues for porous low-dielectric-constant (low-k) materials used in the back-end-of-line interconnects. This study proposed a novel process with in-situ repairing plasma-induced damage and capping a barrier for porous low-k materials by Hexamethyldisilazane (HDMS) plasma treatment. For a plasma-damaged porous low-k material, its surface hydrophilic state was transformed to hydrophobic state by HDMS plasma treatment, revealing that damage was repaired. Simultaneously, a dielectric film was capped onto the porous low-k material, and displayed better barrier capability against Cu migration. Additionally, the breakdown reliability of the stacked dielectric was enhanced by the means of HDMS plasma treatment. The optimized HDMS plasma treatment time was found to be 10 s. Therefore, this proposed HDMS plasma treatment processing is a promising technique for highly applicable low-k material used for advanced technology nodes.

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Reduction of Oxygen Plasma Damage by Postdeposition Helium Plasma Treatment for Carbon-Doped Silicon Oxide Low Dielectric Constant Films

Electrochemical and Solid-State Letters ◽

10.1149/1.1525493 ◽

2003 ◽

Vol 6 (1) ◽

pp. F1 ◽

Cited By ~ 18

Author(s):

Y. H. Wang ◽

D. Gui ◽

R. Kumar ◽

P. D. Foo

Keyword(s):

Dielectric Constant ◽

Plasma Treatment ◽

Oxygen Plasma ◽

Silicon Oxide ◽

Low Dielectric Constant ◽

Helium Plasma ◽

Plasma Damage ◽

Carbon Doped ◽

Low Dielectric ◽

Doped Silicon

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Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H[sub 2] plasma treatment

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1494067 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1476 ◽

Cited By ~ 9

Author(s):

Jia-Min Shieh ◽

Kou-Chiang Tsai ◽

Bau-Tong Dai ◽

Yew-Chung Wu ◽

Yu-Hen Wu

Keyword(s):

Dielectric Constant ◽

Plasma Treatment ◽

Amorphous Carbon ◽

Carbon Films ◽

Low Dielectric Constant ◽

Plasma Damage ◽

Amorphous Carbon Films ◽

Low Dielectric

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Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

MRS Proceedings ◽

10.1557/proc-565-255 ◽

1999 ◽

Vol 565 ◽

Author(s):

Y. Shimogaki ◽

S. W. Lim ◽

E. G. Loh ◽

Y. Nakano ◽

K. Tada ◽

...

Keyword(s):

Growth Rate ◽

Dielectric Constant ◽

Gas Flow ◽

Structural Changes ◽

Silicon Oxide ◽

Reactive Species ◽

Low Dielectric Constant ◽

Low Dielectric ◽

Step Coverage ◽

Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

MRS Proceedings ◽

10.1557/proc-766-e8.10 ◽

2003 ◽

Vol 766 ◽

Cited By ~ 7

Author(s):

Jin-Heong Yim ◽

Jung-Bae Kim ◽

Hyun-Dam Jeong ◽

Yi-Yeoul Lyu ◽

Sang Kook Mah ◽

...

Keyword(s):

Thin Film ◽

Mechanical Properties ◽

Dielectric Constant ◽

Pore Structure ◽

Pore Diameter ◽

Dielectric Films ◽

Low Dielectric Constant ◽

Cyclodextrin Derivatives ◽

Low Dielectric ◽

Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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Low dielectric constant materials: challenges of plasma damage

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306210 ◽

2006 ◽

Cited By ~ 10

Author(s):

M.R. Baklanov ◽

A. Urbanowicz ◽

G. Mannaert ◽

S. Vanhaelemeersch

Keyword(s):

Dielectric Constant ◽

Low Dielectric Constant ◽

Plasma Damage ◽

Low Dielectric ◽

Low Dielectric Constant Materials

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Stress Development in Low Dielectric Constant Silica Films During Drying and Heating Process

MRS Proceedings ◽

10.1557/proc-594-463 ◽

1999 ◽

Vol 594 ◽

Cited By ~ 1

Author(s):

Mengcheng Lu ◽

C. Jeffrey Brinker

Keyword(s):

Dielectric Constant ◽

Tensile Stress ◽

Sol Gel ◽

Low Dielectric Constant ◽

Heating Process ◽

Residual Tensile Stress ◽

Silica Films ◽

Stress Development ◽

Low Dielectric

AbstractLow dielectric constant silica films are made using a surfactant templated sol-gel process (K∼2.5) or an ambient temperature and pressure aerogel process (K∼1.5). This paper will present the in-situ measurement and analysis of stress development during the making of these films, from the onset of drying till the end of heating. The drying stress is measured by a cantilever beam technique; the thermal stress is measured by monitoring the wafer curvature using a laser deflection method. During the course of drying, the surfactant templated films experience a low drying stress due to the influence of the surfactant on surface tension and extent of siloxane condensation. The aerogel films first develop a biaxial tensile stress due to solidification and initial drying. At the final stage of drying where the drying stress vanishes, dilation of the film recreates the porosity of the wet gel state, reducing the residual stress to zero. For the surfactant templated films, very small residual tensile stress remains after the heat treatment is finished (∼30MPa). Aerogel film has almost no measurable stress developed in the calcination process. In situ spectroscopic ellipsometry analysis during drying and heating, and TGA/DTA are all used to help understand the stress development.

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