Rapid Thermal Annealing of p‐Type Silicon: Correlation Between Deep‐Level Transient Spectroscopy and Lifetime Measurements

1994 ◽  
Vol 141 (3) ◽  
pp. 754-758 ◽  
Author(s):  
Antonella Poggi ◽  
Enrichetta Susi ◽  
Maria Angela Butturi ◽  
Maria Cristina Carotta
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Lifetime Measurements ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1992-1995 ◽  
Author(s):  
C. K. Tang ◽  
L. Vines ◽  
B. G. Svensson ◽  
E. V. Monakhov
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

The Ion Implanted Arsenic Tail in Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
C. Clark
Keyword(s):  
Silicon Dioxide ◽  
Thermal Annealing ◽  
Anodic Oxidation ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Activation ◽  
Spreading Resistance ◽  
Transient Spectroscopy ◽  
And Diffusion

AbstractRapid thermal annealed tail regions of shallow junction arsenic implants into silicon have been investigated. Tail profiles have been roduced by an anodic oxidation and stripping technique after implantation to fluences of 1014 to 1016 cm−2 and by implanting through a layer of silicon dioxide. Electrical activation and diffusion have been achieved by rapid thermal annealing in the temperature range of 800 to 1100 °C. Electrically active defects remain after annealing. Spreading resistance and deep level transient spectroscopy results are presented. The diffusion of the arsenic tail is discussed and compared with currently accepted models.

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

2016 ◽  
Vol 254 (4) ◽  
pp. 1600593
Author(s):  
Eddy Simoen ◽  
Suseendran Jayachandran ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
Marc Heyns
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barriers ◽  
Spectroscopy Study ◽  
Type Silicon ◽  
Transient Spectroscopy ◽  
P Type

Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers

1991 ◽  
Vol 224 ◽  
Author(s):  
Akira Usami ◽  
Taichi Natori ◽  
Akira Ito ◽  
Takahide Sugiyama ◽  
Seiya Hirota ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Epitaxial Layers ◽  
Shallow Trap ◽  
Transient Spectroscopy

AbstractIntroduction of oxygen during thermal oxidation and production of defects by rapid thermal annealing (RTA) in n-type epitaxial Si layers were studied with deep-level transient spectroscopy measurements. We use oxygen-related thermal donors (TDs) as a monitor for introduction of oxygen in silicon epitaxial layers. It is found that oxygen is introduced from the substrate into the epitaxial layer after thermal annealing. The TD was almost annihilated by RTA at .700°C. However, a shallow trap (Ec−0.073±0.005 eV) was induced by RTA.

On the Origin of the New Electron Traps Induced By Rapid Thermal Annealing in GaAs Using Capping Proximity Technique.

1988 ◽  
Vol 144 ◽  
Author(s):  
G. Marrakchi ◽  
G. Chaussemy ◽  
A. Laugier ◽  
G. Guillot.
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Native Defect ◽  
Physical Origin ◽  
Electron Traps ◽  
Native Defects ◽  
Growth Method ◽  
Transient Spectroscopy

ABSTRACTRapid Thermal Annealing (RTA) effects on generation or annihilation of deep levels in GaAs have been investigated by Deep Level Transient Spectroscopy (DLTS). Capping proximity technique using three annealing configurations are employed to anneal Liquid Encapsulated Czochralski (LEC) and Bridgman (B) substrates, or Vapor Phase Epitaxy (VPE) and Liquid Phase Epitaxy (LPE) layers. The RTA treatment is performed from 800 to 950°C for two annealing times ( 3 and 10s).The DLTS data show that the evolution of the native defects depends on the GaAs growth method and also the annealing configuration. We observe the appearance of two new electron traps named RL1 and RL2 induced by the RTA process which depend on the kind of substrate: RL1 and RL2 are created in LEC material while only RL1 is detected in B material. A general comparison of our results with others reported in the literature show that these new electron traps are related to the change of stoichiometry at the GaAs surface and also depend on the existence of specific native defects in the starting GaAs material. It is proposed that the creation of RL1 is related to the EL6 native defect and discuss a possible physical origin for this level. We also propose that RL2 and EL5 originate from the same defect and suggest the divacancy VGaVAs as a possible origin for this trap.

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