Application of Localized Zn Diffusion across Heterointerfaces for the Realization of a Compact High‐Speed Bipolar Driver Circuit on InGaAsP / InP

1991 ◽  
Vol 138 (9) ◽  
pp. 2812-2815 ◽  
Author(s):  
R. Weber ◽  
A. Paraskevopoulos ◽  
H. Schroeter‐Janssen ◽  
H. G. Bach
Keyword(s):  
High Speed ◽  
Zn Diffusion ◽  
Driver Circuit

High speed waveguide uni-traveling carrier InGaAs/InP photodiodes fabricated by Zn diffusion doping

2021 ◽  
pp. 1-1
Author(s):  
Lichen Zhang ◽  
Xiaobo La ◽  
Xuyuan Zhu ◽  
Jing Guo ◽  
Ling Juan Zhao ◽  
...  
Keyword(s):  
High Speed ◽  
Zn Diffusion

scholarly journals Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light

Sensors ◽  
2020 ◽  
Vol 20 (23) ◽  
pp. 6895
Author(s):  
Nguyen Hoai Ngo ◽  
Anh Quang Nguyen ◽  
Fabian M. Bufler ◽  
Yoshinari Kamakura ◽  
Hideki Mutoh ◽  
...  
Keyword(s):  
Visible Light ◽  
Temporal Resolution ◽  
High Speed ◽  
Image Sensor ◽  
Propagation Time ◽  
Resolution Limit ◽  
Silicon Photodiode ◽  
Driver Circuit ◽  
Practical Limit ◽  
Better Than

The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material for the photodiode (Ge PD) for visible light since the absorption coefficient of Ge for the wavelength is several tens of times higher than that of Si, allowing a very thin PD. On the other hand, the saturation drift velocity of electrons in Ge is about 2/3 of that in Si. The ratio suggests an ultra-short propagation time of electrons in the Ge PD. However, the diffusion coefficient of electrons in Ge is four times higher than that of Si. Therefore, Monte Carlo simulations were applied to analyze the temporal resolution of the Ge PD. The estimated theoretical temporal resolution limit is 0.26 ps, while the practical limit is 1.41 ps. To achieve a super temporal resolution better than 11.1 ps, the driver circuit must operate at least 100 GHz. It is thus proposed to develop, at first, a short-wavelength infrared (SWIR) ultra-high-speed image sensor with a thicker and wider Ge PD, and then gradually decrease the size along with the progress of the driver circuits.

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