Electrical Characteristics of Erbium Oxide Films on Silicon Substrate by Reactive RF Sputtering for Different Metal Gate

2019 ◽  
Vol 2 (1) ◽  
pp. 255-260
Author(s):  
Rosa María Luna-Sánchez ◽  
Ignacio González-Martínez
Keyword(s):  
Silicon Substrate ◽  
Oxide Films ◽  
Rf Sputtering ◽  
Electrical Characteristics ◽  
Erbium Oxide ◽  
Metal Gate

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

Electrical Characteristics of Thin Cerium Oxide Film on Silicon Substrate by Reactive DC Sputtering

2001 ◽  
Vol 4 (9) ◽  
pp. F15 ◽  
Author(s):  
Tung Ming Pan ◽  
Chao Hsin Chien ◽  
Tan Fu Lei ◽  
Tien Sheng Chao ◽  
Tiao Yuan Huang
Keyword(s):  
Oxide Film ◽  
Cerium Oxide ◽  
Silicon Substrate ◽  
Electrical Characteristics ◽  
Dc Sputtering

Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate

2007 ◽  
Vol 46 (No. 16) ◽  
pp. L376-L378 ◽  
Author(s):  
Jaeyeol Song ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
Kazuo Tsutsui ◽  
Nobuyuki Sugii ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Lanthanum Oxide ◽  
Oxide Films ◽  
Germanium Substrate
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