ATLAS™ based simulation study of the electrical characteristics of dual-metal-gate (DMG) fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs
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2009 ◽
Vol 53
(3)
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pp. 256-265
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2014 ◽
Vol 13
(2)
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pp. 467-476
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2016 ◽
Vol 5
(2)
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pp. 7
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2005 ◽
Vol 8
(12)
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pp. G333
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