Improving Metal Oxide Semiconductor Device Performance Through the Use of Ion Exchange‐Purified  HF

1993 ◽  
Vol 140 (9) ◽  
pp. 2648-2653 ◽  
Author(s):  
Vikram Doshi ◽  
Lindsey Hall ◽  
Thomas Wear ◽  
John Davison
Keyword(s):  
Ion Exchange ◽  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Performance

Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

2006 ◽  
Vol 88 (15) ◽  
pp. 152101 ◽  
Author(s):  
D. Q. Kelly ◽  
I. Wiedmann ◽  
J. P. Donnelly ◽  
S. V. Joshi ◽  
S. Dey ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Applications

scholarly journals Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

2004 ◽  
Vol 85 (16) ◽  
pp. 3387-3389 ◽  
Author(s):  
J. M. Sun ◽  
W. Skorupa ◽  
T. Dekorsy ◽  
M. Helm ◽  
L. Rebohle ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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