Observation of Vacancy in High Purity Silicon Crystal Using Low-Temperature Ultrasonic Measurements

ABSTRACTDirect processes that may be used to manufacture high purity silicon nitride or silicon carbide are described. Elemental silicon has been found to react directly with liquid ammonia and amines at low temperature to yield compounds for both the ceramic and chemical industries. Silicon-amine direct reactions, previously thought not to occur, were investigated by using 29Si NMR, IR, UV, Raman, XRD, ICP, EDS and TGA methods to detect and characterize product formation. The [Si,N,H] and [Si,C,N,H] products transform to silicon nitride or silicon carbide respectively when heated above 1300°C.

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High Purity Silicon Amido Precursors for Low Temperature Cvd of High к Gate Silicates

MRS Proceedings ◽

10.1557/proc-716-b2.11 ◽

2002 ◽

Vol 716 ◽

Cited By ~ 1

Author(s):

A.S. Borovik ◽

C. Xu ◽

B. C. Hendrix ◽

J. F. Roeder ◽

T. H. Baum

Keyword(s):

Low Temperature ◽

Elemental Analysis ◽

High Purity ◽

Gate Dielectrics ◽

High Yield ◽

Synthetic Method ◽

Icp Ms ◽

Metal Silicate ◽

High Purity Silicon ◽

Chemical Techniques

AbstractHigh purity silicon amido precursors provide a route to low temperature CVD of silicate gate dielectrics. We have developed a straightforward synthetic method for the production of high purity Si[N(CH3)2]4, Si(NMeEt)4, HSi(NEtMe)3 and HSi(NEt2)3 in high yield. These compounds were fully characterized by NMR, GC/MS, ICP-MS, ICchlorine, and elemental analysis. Their solution compatibility with an Hf amide source was also examined by chemical techniques. Low temperature CVD of metal silicate films is also demonstrated.

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Vacancies in Growth-Rate-Varied CZ Silicon Crystal Observed by Low-Temperature Ultrasonic Measurements

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.131-133.455 ◽

2007 ◽

Vol 131-133 ◽

pp. 455-460 ◽

Cited By ~ 3

Author(s):

Hiroshi Yamada-Kaneta ◽

Terutaka Goto ◽

Yuichi Nemoto ◽

Koji Sato ◽

Masatoshi Hikin ◽

...

Keyword(s):

Low Temperature ◽

Point Defects ◽

Vacancy Concentration ◽

Silicon Crystal ◽

Floating Zone ◽

Rich Region ◽

Silicon Crystals ◽

Ultrasonic Measurements ◽

Measured Distribution ◽

Elastic Softening

The low-temperature ultrasonic experiments are performed to measure the distribution of vacancy concentration in the ingot of the Czochralski (CZ) silicon crystal grown with the pulling rate gradually lowered. The elastic softening similar to that we recently found for the floating-zone-grown silicon crystals is observed for the so-called vacancy-rich region of the ingot which contains no voids or dislocation clusters. We further uncover that the interstitial-rich region in the ingot exhibits no such elastic softening, confirming our previous conclusion that the defects responsible for the low-temperature elastic softening are the vacancies. We also disclose that the elastic softening is absent for the ring-like oxidation stacking fault (R-OSF) region of the ingot. The measured distribution of the vacancy concentration indicates that the minority point defects are perfectly cancelled by the majority point defects during the CZ crystal growth.

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A study of hydrogenation in a high-purity silicon crystal

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(85)90504-x ◽

1985 ◽

Vol 12 (4) ◽

pp. 486-489 ◽

Cited By ~ 15

Author(s):

Chengzhou Ji ◽

Tiansheng Shi ◽

P. Wang

Keyword(s):

High Purity ◽

Silicon Crystal ◽

High Purity Silicon

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The Interactions of Carbon and Nitrogen in Liquid Silicon

High Temperature Materials and Processes ◽

10.1515/htmp-2013-0043 ◽

2014 ◽

Vol 33 (4) ◽

pp. 363-368 ◽

Cited By ~ 4

Author(s):

Halvor Dalaker ◽

Merete Tangstad

Keyword(s):

Silicon Nitride ◽

Carbon Source ◽

Nitrogen Content ◽

High Purity ◽

Liquid Silicon ◽

Interaction Parameters ◽

Carbon And Nitrogen ◽

Temperature Range ◽

High Purity Silicon

AbstractThe interactions between carbon and nitrogen in liquid silicon have been studied experimentally. High purity silicon was melted in silicon nitride crucibles under an Ar atmosphere with a graphite slab inserted in the crucible prior to melting as a carbon source. The system was thus simultaneously equilibrated with Si3N4 and SiC. Samples were extracted in the temperature range 1695–1798 K and analyzed using Leco.It was observed that the simultaneous saturation of nitrogen and carbon caused a significant increase in the solubilities of both elements. The interaction parameters were derived as The solubility of carbon in liquid silicon as a function of temperature and nitrogen content was found to follow: And the solubility of nitrogen in liquid silicon found to follow:

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