RF Modeling of Large Gate-Width Multi-Finger Si/SiGe Power MODFETs

Hao-Chih Yuan; Ningyue Jiang; Edward Croke; Zhenqiang Ma

doi:10.1149/1.2355892

Accompanied arrangement effect of stretched gate width and dummy diffusion region on strained silicon PMOSFETs

2016 IEEE International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2016.7589276 ◽

2016 ◽

Author(s):

Chang-Chun Lee ◽

Chia-Ping Hsieh ◽

Ming-Han Liao

Keyword(s):

Strained Silicon ◽

Diffusion Region ◽

Gate Width

A High-Power AlGaN/GaN Hetero Field-Effect Transistor

MRS Proceedings ◽

10.1557/proc-693-i12.7.1 ◽

2001 ◽

Vol 693 ◽

Author(s):

Seikoh Yoshida ◽

Hirotatsu Ishii

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Breakdown Field ◽

Gate Width ◽

Gas Source ◽

Large Current ◽

Effect Transistor ◽

Current Operation ◽

Dimensional Electron Gas ◽

State Resistance

AbstractAn AlGaN/GaN hetero field effect transistor (HFET) was operated at 20 A. Its on-state resistance was lower than that of a Si-based FET. GaN and related materials were grown by gas-source molecular beam epitaxy (GSMBE). Sapphire substrates were used for GaN growth. An undoped GaN/Al0.2Ga0.8N heterostructure wasgrown on the substrate. The sheet carrier density of two dimensional electron gas was 1x1013 cm2 and the mobility was 1200 cm2/Vs at room temperature. The breakdown field of undoped high resistive GaN layer was about 2.0 MV/cm. Al0.2Ga0.8N/GaN HFET for a large current operation was fabricated. The gate width was 20 cm and thegate length was 2000 nm. The electrode material of the source and the drain was Al/Ti/Au and the Schottky electrodes were Pt/Au. The distance between the source and the drain was 6000 nm. The maximum breakdown voltage of gate and source was 600 V. The on-state resistance of the HFET was about 2 mohm•cm2 at 100 V. The transconductance (gm) of this HFET was about 120 mS/mm. It was confirmed that the HFET with a gate width of20 cm could be operated at the condition of a large current operation.

Measuring the impact of CCD gate width on the brighter-fatter effect

X-Ray, Optical, and Infrared Detectors for Astronomy IX ◽

10.1117/12.2562730 ◽

2020 ◽

Author(s):

Daniel P. Weatherill ◽

Daniel Wood ◽

Ian Shipsey ◽

Richard Plackett ◽

Andrea Loreti ◽

...

Keyword(s):

Gate Width ◽

The Impact

High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells

Journal of Semiconductors ◽

10.1088/1674-4926/35/3/034012 ◽

2014 ◽

Vol 35 (3) ◽

pp. 034012

Author(s):

Yang Tang ◽

Zuochang Ye ◽

Yan Wang

Keyword(s):

Millimeter Wave ◽

High Efficiency ◽

Gate Width

Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.024106 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 024106 ◽

Cited By ~ 6

Author(s):

Anil Kumar ◽

Tomoko Mizutani ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Length ◽

Fully Depleted ◽

Gate Width ◽

Onset Voltage

Variable Gate Width, All-Optical Sampling using Electroabsorption Modulator for Optical Performance Monitor

Optical Fiber Communication Conference/National Fiber Optic Engineers Conference 2011 ◽

10.1364/ofc.2011.owc3 ◽

2011 ◽

Cited By ~ 2

Author(s):

Takashi Mori ◽

Takehiro Tsuritani ◽

Akihito Otani

Keyword(s):

Optical Performance ◽

Electroabsorption Modulator ◽

Gate Width ◽

Optical Sampling ◽

All Optical ◽

Performance Monitor

Speed improvement of FPGA by mixing multiple-gate-width routing switches

Electronics and Communications in Japan (Part III Fundamental Electronic Science) ◽

10.1002/ecjc.20154 ◽

2005 ◽

Vol 88 (7) ◽

pp. 14-22

Author(s):

Yohei Matsumoto ◽

Akira Masaki

Keyword(s):

Gate Width ◽

Routing Switches

Bulk inversion in FinFETs and the implied insignificance of the effective gate width

2004 IEEE International SOI Conference (IEEE Cat No 04CH37573) SOI-04 ◽

10.1109/soi.2004.1391593 ◽

2005 ◽

Cited By ~ 1

Author(s):

S.-H. Kim ◽

J.G. Fossum ◽

V.P. Trivedi

Keyword(s):

Gate Width ◽

Bulk Inversion

On the Delay of a CNTFET with Undeposited CNTs by Gate Width Adjustment

Journal of Electronic Testing ◽

10.1007/s10836-013-5388-6 ◽

2013 ◽

Vol 29 (3) ◽

pp. 261-273

Author(s):

Geunho Cho ◽

Fabrizio Lombardi

Keyword(s):

Gate Width

TLP Characterization of large gate width devices

Microelectronics Reliability ◽

10.1016/j.microrel.2007.07.041 ◽

2007 ◽

Vol 47 (9-11) ◽

pp. 1462-1467 ◽

Cited By ~ 2

Author(s):

P. Coppens ◽

G. Jenicot ◽

H. Casier ◽

F. De Pestel ◽

F. Depuydt ◽

...

Keyword(s):

Gate Width