Linearity Analysis in Double Gate Graded-Channel Soi Devices Applied to 2-Mos Mosfet-C Balanced Structures

2019 ◽  
Vol 14 (1) ◽  
pp. 273-282
Author(s):  
Rodrigo T. Doria ◽  
Antonio Cerdeira ◽  
Jean-Pierre Raskin ◽  
Denis Flandre ◽  
Marcelo A. Pavanello
Keyword(s):  
Double Gate ◽  
Soi Devices

Geometric Magnetoresistance and Mobility Behavior in Single-Gate and Double-Gate SOI Devices

2007 ◽  
Author(s):  
N. Rodriguez ◽  
L. Donetti ◽  
F. Gamiz ◽  
S. Cristoloveanu
Keyword(s):  
Double Gate ◽  
Mobility Behavior ◽  
Soi Devices

Double-gate SOI devices for low-power and high-performance applications

2006 ◽  
Author(s):  
K. Roy ◽  
H. Mahmoodi ◽  
S. Mukhopadhyay ◽  
H. Ananthan ◽  
A. Bansal ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Double Gate ◽  
Soi Devices

Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices

2002 ◽  
Author(s):  
L.J. Huang ◽  
K. Chan ◽  
P.M. Solomon ◽  
E. Jones ◽  
C. D'Emic ◽  
...  
Keyword(s):  
Ground Plane ◽  
Silicon Substrates ◽  
Double Gate ◽  
Soi Devices

Double-gate SOI devices for low-power and high-performance applications

2005 ◽  
Author(s):  
K. Roy ◽  
H. Mahmoodi ◽  
S. Mukhopadhyay ◽  
H. Ananthan ◽  
A. Bansal ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Double Gate ◽  
Soi Devices

scholarly journals To study high performance analysis of surround gate SOI MOSFET

2018 ◽  
Vol 7 (2.8) ◽  
pp. 191
Author(s):  
Arjimand Ashaf ◽  
Manisha Tyagi ◽  
Prashant Mani
Keyword(s):  
Performance Analysis ◽  
High Performance ◽  
Device Modeling ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Soi Mosfet ◽  
Gate Structure ◽  
Rigorous Study ◽  
Soi Devices

In this paper, we are presenting a rigorous study about SOI MOSFET devices development. The development of SOI devices based on gate structure from single gate to surround gate is presented in this paper. We compared the various electrical characteristics between Single gate, double gate, and bulk and also discussed the device modeling based on surround gate structure.

Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement

2009 ◽  
Vol 30 (12) ◽  
pp. 1338-1340 ◽  
Author(s):  
L. Donetti ◽  
F. Gamiz ◽  
N. Rodriguez ◽  
A. Godoy
Keyword(s):  
Acoustic Phonon ◽  
Hole Mobility ◽  
Double Gate ◽  
Phonon Confinement ◽  
Soi Devices
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