Effect of the Chemical Oxide Layer Thickness on the Interfacial Quality of ALD-Grown HfO2 on Silicon

2019 ◽  
Vol 28 (2) ◽  
pp. 89-95
Author(s):  
Shibin Li ◽  
Zhi D. Chen
2013 ◽  
Vol 815 ◽  
pp. 86-92
Author(s):  
Xiao Feng Jia ◽  
Bo Zhao ◽  
Ping Yan Bian

The oxide layer formed and removed on the surface of the grinding wheel has a significant influence on the grinding quality of ultrasonic-ELID multiplicate grinding. In this paper on the basis of the principles of electrochemical and ultrasonic vibration, the mechanisms of oxide layer formation and remotion were analyzed. Then, the predictive modeling of oxide layer thickness was proposed. The effects of main factors on the oxide film thickness were simulated and analyzed theoretically. The simulation results show that the layer thickness decreases with the decrease of the duty ratio or the grain volume ratio or the ultrasonic frequency ,and the increase of the electrode gap during the composite grinding process.


2018 ◽  
Vol 924 ◽  
pp. 273-276 ◽  
Author(s):  
Masanobu Yoshikawa ◽  
Keiko Inoue ◽  
Junichiro Sameshima ◽  
Hirohumi Seki

We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with a various thickness, grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by about 5 cm−1 as the oxide-layer thickness decreased from 50-60 nm to 10 nm. The blue shift of the TO mode is considerd to be caused by interfacial compressive stresses in the oxide-layer. On the other hand, the TO phonon mode was found to dramatically decrease as the oxide-layer thickness decreased from 10 nm to 1.7 nm. The CL measurement indicates that the intensity of the CL peaks at about 460 and 490 nm attributed to oxygen vacancy centers (OVCs) for No.2 become stronger than that for No.1. From a comparison between FT-IR and CL measurements, we concluded that the red-shift of the TO phonon with decreasing the oxide-layer thickness can mainly be attributed to an increase in inhomogeneity at the SiO2/SiC interface with decreasing oxide-layer thickness.


Author(s):  
M. Szota ◽  
A. Łukaszewicz ◽  
K. Machnik

Purpose: The paper presents the results of microstructure, surface development and thickness of the oxide layer on the pure titanium Grade 2 after mechanical activation and heat treatment (550°C/5h). Design/methodology/approach: Studies show that it is possible to control the thickness of the oxide layer by using different materials to change the roughness of surface - mechanical activation before heat treatment. After mechanical activation and heat treatment, the results of the thickness of the oxide layer as well as a level of surface development were obtained, presented and discussed. Findings: The conducted research have proved that mechanical activation of the surface which cause increase of surface development results in greater thickness of oxide layer which is formed during heat treatment. Nevertheless mechanical activation that results in decrease of surface development, such as polishing, results in decrease of oxide layer thickness. Research limitations/implications: The conducted research have showed up that mechanical activation of the surface which cause increase of surface development results in greater thickness of oxide layer which is formed during heat treatment. Nevertheless, mechanical activation that results in decrease of surface development, such as polishing, results in decrease of oxide layer thickness. Practical implications: are possible using similar method for passivation titanium alloys for medical application. Originality/value: The paper presents the possibility of using mechanical preactivation of surface before heat treatment passivation.


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