The possibility to control the thickness of the oxide layer on the titanium Grade 2 by mechanical activation and heat treatment

Author(s):  
M. Szota ◽  
A. Łukaszewicz ◽  
K. Machnik

Purpose: The paper presents the results of microstructure, surface development and thickness of the oxide layer on the pure titanium Grade 2 after mechanical activation and heat treatment (550°C/5h). Design/methodology/approach: Studies show that it is possible to control the thickness of the oxide layer by using different materials to change the roughness of surface - mechanical activation before heat treatment. After mechanical activation and heat treatment, the results of the thickness of the oxide layer as well as a level of surface development were obtained, presented and discussed. Findings: The conducted research have proved that mechanical activation of the surface which cause increase of surface development results in greater thickness of oxide layer which is formed during heat treatment. Nevertheless mechanical activation that results in decrease of surface development, such as polishing, results in decrease of oxide layer thickness. Research limitations/implications: The conducted research have showed up that mechanical activation of the surface which cause increase of surface development results in greater thickness of oxide layer which is formed during heat treatment. Nevertheless, mechanical activation that results in decrease of surface development, such as polishing, results in decrease of oxide layer thickness. Practical implications: are possible using similar method for passivation titanium alloys for medical application. Originality/value: The paper presents the possibility of using mechanical preactivation of surface before heat treatment passivation.

Author(s):  
M. Szota ◽  
A. Łukaszewicz ◽  
A. Bukowska

Purpose: The paper presents the results of mechanical activation of the surface on oxide layer thickness after heat treatment of TU6Al14V ELI alloy. Design/methodology/approach: Specimens were made from 5 mm diameter rod cut into semicircular slices. The samples were mechanically activated throughout mechanical treatment of the surface: one sandblasted with glass beads during 5 minutes and other ground with sandpaper grit 40, 180, 220 and 800 during 7.5 and 15 minutes. Findings: Then microstructure of specimens etched with Kroll solution was observed using an optical microscope and roughness parameters of the surface were measured. Research limitations/implications: Afterwards heat treatment (550°C, 5 hours) was conducted, then roughness parameters and thickness of the oxide layer were measured by means of a scanning microscope. Practical implications: The conducted research showed up that mechanical activation of the surface which cause an increase of surface development results in greater thickness of the oxide layer which is formed during heat treatment. Nevertheless, mechanical activation that results in a decrease of surface development, such as polishing, results in a decrease of oxide layer thickness. Originality/value: The results of the research can be used to obtain the desired thickness of the oxide layer in the production of the elements that require increased wear and corrosion resistance.


2018 ◽  
Vol 924 ◽  
pp. 273-276 ◽  
Author(s):  
Masanobu Yoshikawa ◽  
Keiko Inoue ◽  
Junichiro Sameshima ◽  
Hirohumi Seki

We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with a various thickness, grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by about 5 cm−1 as the oxide-layer thickness decreased from 50-60 nm to 10 nm. The blue shift of the TO mode is considerd to be caused by interfacial compressive stresses in the oxide-layer. On the other hand, the TO phonon mode was found to dramatically decrease as the oxide-layer thickness decreased from 10 nm to 1.7 nm. The CL measurement indicates that the intensity of the CL peaks at about 460 and 490 nm attributed to oxygen vacancy centers (OVCs) for No.2 become stronger than that for No.1. From a comparison between FT-IR and CL measurements, we concluded that the red-shift of the TO phonon with decreasing the oxide-layer thickness can mainly be attributed to an increase in inhomogeneity at the SiO2/SiC interface with decreasing oxide-layer thickness.


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