Ion Conduction in Layered Oxide Solid Electrolyte

2019 ◽  
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Toru Kyomen ◽  
Minoru Hanaya ◽  
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2017 ◽  
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Hwo-Shuenn Sheu ◽  
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2018 ◽  
Vol 294 ◽  
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M.C. Paulus ◽  
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A. Paulus ◽  
P.P.M. Schleker ◽  
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2020 ◽  
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2020 ◽  
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2019 ◽  
Vol 12 (03) ◽  
pp. 1950023
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Ya Wang ◽  
Hao Liu

In this paper, we report the bipolar resistive switching behaviors in Ag/Sm2O3/Pt structures where the Sm2O3 thin films act as solid electrolyte layer of electrochemical metallization memory (ECM) devices. The memory devices show reproducible and stable bipolar resistive switching over 1000 cycles with a resistance ratio (high-resistance state to low-resistance state) of over 4 orders of magnitude and stable retention for over 104[Formula: see text]s at room temperature. Moreover, the benefits of high yield and multilevel storage possibility make the device promising in the next generation non-volatile memory application.


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