scholarly journals Metal-Catalyst-Free Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors

2011 ◽  
Vol 14 (4) ◽  
pp. K21 ◽  
Author(s):  
T. Uchino ◽  
G. Ayre ◽  
D. C. Smith ◽  
J. L. Hutchison ◽  
C. H. de Groot ◽  
...  
2010 ◽  
Author(s):  
T. Uchino ◽  
G. N. Ayre ◽  
D. C. Smith ◽  
J. L. Hutchison ◽  
C. H. de Groot ◽  
...  

2009 ◽  
Vol 131 (6) ◽  
pp. 2094-2095 ◽  
Author(s):  
Shaoming Huang ◽  
Qiran Cai ◽  
Jiangying Chen ◽  
Yong Qian ◽  
Lijie Zhang

2009 ◽  
Vol 131 (6) ◽  
pp. 2082-2083 ◽  
Author(s):  
Bilu Liu ◽  
Wencai Ren ◽  
Libo Gao ◽  
Shisheng Li ◽  
Songfeng Pei ◽  
...  

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DN02
Author(s):  
Takashi Uchino ◽  
John L. Hutchison ◽  
Greg N. Ayre ◽  
David C. Smith ◽  
Kees de Groot ◽  
...  

2011 ◽  
Vol 26 (8) ◽  
pp. 881-884 ◽  
Author(s):  
Can WANG ◽  
Liang ZHAN ◽  
Zhen-Hong HUANG ◽  
Wen-Ming QIAO ◽  
Xiao-Yi LIANG ◽  
...  

2011 ◽  
Vol 50 (4) ◽  
pp. 04DN02 ◽  
Author(s):  
Takashi Uchino ◽  
John L. Hutchison ◽  
Greg N. Ayre ◽  
David C. Smith ◽  
Kees de Groot ◽  
...  

2012 ◽  
Vol 1407 ◽  
Author(s):  
T. Uchino ◽  
G. N. Ayre ◽  
D. C. Smith ◽  
J. L. Hutchison ◽  
C. H. de Groot ◽  
...  

ABSTRACTThe metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is presented. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode (RBM) peaks and the absence of the disorder induced D-band, indicating single walled CNTs (SWNTs) with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/decade.


RSC Advances ◽  
2014 ◽  
Vol 4 (76) ◽  
pp. 40251-40258 ◽  
Author(s):  
Zhi-Yan Zeng ◽  
Jarrn-Horng Lin

Carbon black can act as catalysts to grow carbon nanotubes or carbon nanofibers through a metal-catalyst-free thermal chemical vapor deposition.


2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.


2014 ◽  
Vol 16 (22) ◽  
pp. 10861-10865 ◽  
Author(s):  
Jia Gao ◽  
Yueh-Lin Loo

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.


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