CMOS Compatible Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors

2012 ◽  
Vol 1407 ◽  
Author(s):  
T. Uchino ◽  
G. N. Ayre ◽  
D. C. Smith ◽  
J. L. Hutchison ◽  
C. H. de Groot ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Defect Density ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Chemical Vapor ◽  
Radial Breathing Mode ◽  
Metal Catalyst ◽  
Single Walled Cnts ◽  
Walled Cnts

ABSTRACTThe metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is presented. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode (RBM) peaks and the absence of the disorder induced D-band, indicating single walled CNTs (SWNTs) with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/decade.

FABRICATION OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS WITH OCMC DISPERSED SINGLE-WALLED CARBON NANOTUBES

2010 ◽  
Vol 09 (04) ◽  
pp. 377-381
Author(s):  
KUMAR RAJ ◽  
QING ZHANG ◽  
LIANGYU YAN ◽  
MARY B. CHAN PARK
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Oxygen Adsorption ◽  
P Type ◽  
Walled Carbon Nanotubes ◽  
Single Walled Cnts ◽  
Walled Cnts

We report on the fabrication of carbon nanotube field effect transistors (CNTFETs) from dispersed single-walled CNTs using OCMC (O-Carboxymethylchitosan) as the surfactant. The as-prepared devices exhibit p-type as well as ambipolar characteristics due to oxygen adsorption at the metal/nanotube contacts. The Raman scattering from the SWCNTs shows that OCMC disperses CNTs efficiently. Rapid thermal annealing (RTA) at 400°C for 5 min is found to partially remove OCMC from the surface of SWCNTs.

Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst

2003 ◽  
Vol 42 (Part 1, No. 6B) ◽  
pp. 4116-4119 ◽  
Author(s):  
Yutaka Ohno ◽  
Shinya Iwatsuki ◽  
Tatsuki Hiraoka ◽  
Toshiya Okazaki ◽  
Shigeru Kishimoto ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Metal Catalyst

Carbon Felt/Carbon Nanotubes/Pani as pH Sensor

2007 ◽  
Vol 1018 ◽  
Author(s):  
Glaucio Ribeiro Silva ◽  
Elaine Yoshiko Matsubara ◽  
Paola Corio ◽  
Jose Mauricio Rosolen ◽  
Marcelo Mulato
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Conductivity ◽  
Ph Sensor ◽  
Chemical Vapor ◽  
Drain Current ◽  
Carbon Felt ◽  
Chemical Vapor Decomposition

AbstractThis work proposes the use of the composite carbon felt/carbon nanotube/Polyaniline as an alternative for applications as a pH sensor device. The carbon felt/carbon nanotube is an electronic conductivity material that was obtained from polymer felt (poliacrilonitrile felt) using oxidation and carbonization processes. The cup-stacked and bamboo-like tubes were grown on the fibers of carbon felt by chemical vapor decomposition method. The sensor was obtained by incorporating polyaniline (Pani) on the nanotubes present on the fibers of carbon felt/carbon nanotubes composite. The measuring process uses an EGFET (Extended Gate Field Effect Transistors) configuration, which is a derivation of the ISFET (Ion Sensitive Field Effect Transistor) - that is basically a chemical semiconductor sensor. The drain-current versus source-drain voltage is presented for varying pH concentrations from 2 up to 12.

scholarly journals Metal-Catalyst-Free Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors

2011 ◽  
Vol 14 (4) ◽  
pp. K21 ◽  
Author(s):  
T. Uchino ◽  
G. Ayre ◽  
D. C. Smith ◽  
J. L. Hutchison ◽  
C. H. de Groot ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Catalyst ◽  
Catalyst Free ◽  
Free Growth

scholarly journals Dispersion of Carbon Nanotubes with “Green” Detergents

Molecules ◽  
2021 ◽  
Vol 26 (10) ◽  
pp. 2908
Author(s):  
Kazuo Umemura ◽  
Ryo Hamano ◽  
Hiroaki Komatsu ◽  
Takashi Ikuno ◽  
Eko Siswoyo
Keyword(s):  
Carbon Nanotubes ◽  
Sodium Dodecyl ◽  
Detergent Solution ◽  
Absorbance Spectroscopy ◽  
Fundamental Research ◽  
The Stability ◽  
Single Walled Cnts ◽  
Better Than ◽  
Walled Cnts ◽  
Cnt Suspensions

Solubilization of carbon nanotubes (CNTs) is a fundamental technique for the use of CNTs and their conjugates as nanodevices and nanobiodevices. In this work, we demonstrate the preparation of CNT suspensions with “green” detergents made from coconuts and bamboo as fundamental research in CNT nanotechnology. Single-walled CNTs (SWNTs) with a few carboxylic acid groups (3–5%) and pristine multi-walled CNTs (MWNTs) were mixed in each detergent solution and sonicated with a bath-type sonicator. The prepared suspensions were characterized using absorbance spectroscopy, scanning electron microscopy, and Raman spectroscopy. Among the eight combinations of CNTs and detergents (two types of CNTs and four detergents, including sodium dodecyl sulfate (SDS) as the standard), SWNTs/MWNTs were well dispersed in all combinations except the combination of the MWNTs and the bamboo detergent. The stability of the suspensions prepared with coconut detergents was better than that prepared with SDS. Because the efficiency of the bamboo detergents against the MWNTs differed significantly from that against the SWNTs, the natural detergent might be useful for separating CNTs. Our results revealed that the use of the “green” detergents had the advantage of dispersing CNTs as well as SDS.

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Design Features

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.

Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

2014 ◽  
Vol 16 (22) ◽  
pp. 10861-10865 ◽  
Author(s):  
Jia Gao ◽  
Yueh-Lin Loo
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Large Diameter ◽  
Ozone Exposure ◽  
Electrical Characteristics

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.

Sign in / Sign up

Export Citation Format

Share Document