Study of the Electrical Properties of a Packed Carbon Bed for Its Potential Application as a 3D-Cathode in Electrochemical Processes

2018 ◽  
Vol 165 (10) ◽  
pp. E460-E465 ◽  
Author(s):  
A. I. Zárate-Guzmán ◽  
J. Manríquez-Rocha ◽  
R. Antaño-López ◽  
F. J. Rodríguez-Valadez ◽  
Luis A. Godínez
Keyword(s):  
Electrical Properties ◽  
Potential Application ◽  
Electrochemical Processes ◽  
3D Cathode

Mechanical and electrical properties of electroactive papers and its potential application

2005 ◽  
Author(s):  
Jaehwan Kim ◽  
Woochul Jung ◽  
William Craft ◽  
John Shelton ◽  
Kyo D. Song ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Potential Application ◽  
Mechanical And Electrical Properties

scholarly journals Simultaneous tuning of optical and electrical properties in a multifunctional LiNbO3 matrix upon doping with Eu3+ ions

RSC Advances ◽  
2020 ◽  
Vol 10 (52) ◽  
pp. 31070-31086 ◽  
Author(s):  
Nimai Pathak ◽  
Partha Sarathi Ghosh ◽  
Sumanta Mukherjee ◽  
Balaji Prasad Mandal
Keyword(s):  
Electrical Properties ◽  
Potential Application ◽  
Special Focus ◽  
Optical And Electrical Properties ◽  
Dielectric Studies

PL and dielectric studies have been carried out on LiNbO3 and Eu3+:LiNbO3 compounds with a special focus on simultaneous tuning of optical and electrical properties for their potential application in optical–electrical integration.

scholarly journals Interplay between local distortion at lattice sites with optical and electrical properties of Eu3+-doped MNbO3 (M = Na and K) compounds

2020 ◽  
Vol 1 (7) ◽  
pp. 2380-2394 ◽  
Author(s):  
Nimai Pathak ◽  
Sumanta Mukherjee ◽  
Balaji Prasad Mandal ◽  
A. K. Yadav ◽  
S. N. Jha ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Potential Application ◽  
Lattice Site ◽  
Optical And Electrical Properties ◽  
Local Distortion

An effort was made to understand the correlation between local distortion at the lattice site with optical and electrical properties of Eu3+-doped MNbO3 (M = Na and K) compounds for their potential application in piezophotonic devices.

A comparative study of nanostructured Silicon-Nitride electrical properties for potential application in RF-MEMS capacitive switches

2019 ◽  
Vol 100-101 ◽  
pp. 113360 ◽  
Author(s):  
D. Birmpiliotis ◽  
G. Stavrinidis ◽  
M. Koutsoureli ◽  
G. Konstantinidis ◽  
G. Papaioannou ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Comparative Study ◽  
Potential Application ◽  
Rf Mems ◽  
Capacitive Switches ◽  
Nanostructured Silicon

scholarly journals Preparation, Structure, and Properties of Surface Modified Graphene/Epoxy Resin Composites for Potential Application in Conductive Ink

Coatings ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 387 ◽  
Author(s):  
Youliang Cheng ◽  
Qingling Zhang ◽  
Changqing Fang ◽  
Jing Chen ◽  
Jian Su ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epoxy Resin ◽  
Potential Application ◽  
Bending Strength ◽  
Resin Composites ◽  
Conductive Ink ◽  
Mechanical And Electrical Properties ◽  
Epoxy Resin Composites ◽  
Tensile And Bending Strength ◽  
Modified Graphene

The dispersity of graphene (GE) in the matrix has an important influence on the thermal, mechanical, and electrical properties of its derived composites. In this paper, surface modification with a silane coupling agent and a double injection method were used to improve the dispersity of GE in epoxy resin (EP). The thermal, mechanical, and electrical properties of modified graphene/epoxy resin composites (modified GE/EP) were investigated by the thermogravimetric analysis, a four-probe method, and the tensile and bending strength. The results reveal that these properties of the composites can be improved significantly by using the modified GE as the filler. The surface of the modified GE/EP composite was smooth when the curing temperature was 75 °C. The weight loss of the modified GE/EP composite was lower than that of pure EP. The tensile and bending strength of modified GE/EP-0.07 (0.07 wt % modified GE) reached 74.65 and 106.21 MPa, respectively. In addition, the resistivity of modified GE/EP-0.1 (0.1 wt % modified GE) decreased to 52 Ω·cm, which was lower than that of CB/EP-1 (1 wt % carbon black, 95 Ω·cm) and Ag/EP-50 (50 wt % Ag particles, 102 Ω·cm). It is worth noting that the percolation threshold of the modified GE/EP composites was 0.025 vol % modified GE. These results show that the modified GE/EP composites have a potential application in conductive ink when the modified GE is used as the conductive filler.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Formation of high temperature phase in flash-evaporated SnSe films

1990 ◽  
Vol 48 (4) ◽  
pp. 698-699
Author(s):  
J.P.S. Hanjra
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Gap ◽  
Dominant Role ◽  
Fine Powder ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Water Mixture ◽  
Flash Evaporation ◽  
Photovoltaic Applications

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.

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