Tribological, Thermal, Kinetic, and Pad Micro-Textural Studies Using Polyphenylene Sulfide Retaining Rings in Interlayer Dielectric Chemical Mechanical Planarization

2020 ◽  
Vol 9 (12) ◽  
pp. 124002
Author(s):  
Ara Philipossian ◽  
Yasa Sampurno ◽  
Michael Tustin ◽  
Anton Schranner
Keyword(s):  
Chemical Mechanical Planarization ◽  
Polyphenylene Sulfide ◽  
Interlayer Dielectric

Effect of Pad Surface Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process

2013 ◽  
Vol 52 (1R) ◽  
pp. 018001 ◽  
Author(s):  
Xiaoyan Liao ◽  
Yun Zhuang ◽  
Leonard J. Borucki ◽  
Jiang Cheng ◽  
Siannie Theng ◽  
...  
Keyword(s):  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Interlayer Dielectric ◽  
Planarization Process

Development and Analysis of a High-Pressure Micro Jet Pad Conditioning System for Interlayer Dielectric Chemical Mechanical Planarization

2005 ◽  
Vol 44 (3) ◽  
pp. 1225-1231 ◽  
Author(s):  
Yoshiyuki Seike ◽  
Darren DeNardis ◽  
Masano Sugiyama ◽  
Keiji Miyachi ◽  
Toshiro Doi ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Mechanical Planarization ◽  
Interlayer Dielectric ◽  
Pad Conditioning

Pad Wear Analysis during Interlayer Dielectric Chemical Mechanical Planarization

2012 ◽  
Vol 1 (5) ◽  
pp. N103-N105 ◽  
Author(s):  
Yubo Jiao ◽  
Yun Zhuang ◽  
Xiaomin Wei ◽  
Yasa Sampurno ◽  
Anand Meled ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Interlayer Dielectric ◽  
Wear Analysis ◽  
Pad Wear

Potential-pH Diagrams of Interest to Chemical Mechanical Planarization of Copper Thin Films

2005 ◽  
Vol 867 ◽  
Author(s):  
Serdar Aksu
Keyword(s):  
Performance Metrics ◽  
Ethylenediaminetetraacetic Acid ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Copper Removal ◽  
Chemical Components ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Interlayer Dielectric ◽  
Cu Cmp

AbstractChemical mechanical planarization (CMP), which can globally planarize both silicon dioxide (the prevalent interlayer dielectric), and copper films, has become the key process in the damascene method used for producing integrated circuit (IC) devices with multilevel copper interconnects. Cu CMP is typically carried out with slurries containing oxidizing agents, complexing agents, and corrosion inhibitors as the principal chemical components. In such slurries, complexing agents enhance the solubility of copper and increase the dissolution rate of the abraded material in Cu CMP. They also assist achieving high copper removal rates during dynamic polishing conditions. The nature of the complexing agent used, the pH and the redox potential of the slurry system are among the main factors controlling the dissolution and passivation behaviors of copper during CMP. Consequently, these factors are intimately related to the key CMP performance metrics such as removal rate and planarity. In this paper, potentialpH diagrams of copper in aqueous systems containing a number of organic complexing agents including ethylenediaminetetraacetic acid (EDTA), nitrilotriacetic acid (NTA), oxalic acid and malonic acid are presented. The predominance regions of copper complexes under different copper and ligand activities and their implications on copper removal during CMP are discussed.

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