Pad Wear Analysis during Interlayer Dielectric Chemical Mechanical Planarization

2012 ◽  
Vol 1 (5) ◽  
pp. N103-N105 ◽  
Author(s):  
Yubo Jiao ◽  
Yun Zhuang ◽  
Xiaomin Wei ◽  
Yasa Sampurno ◽  
Anand Meled ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Interlayer Dielectric ◽  
Wear Analysis ◽  
Pad Wear

Finite Element Modeling of Pad Deformation due to Diamond Disc Conditioning in Chemical Mechanical Polishing (CMP)

2012 ◽  
Author(s):  
Emmanuel A. Baisie ◽  
Z. C. Li ◽  
X. H. Zhang
Keyword(s):  
Mechanical Properties ◽  
Finite Element ◽  
Material Removal ◽  
High Performance ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Element Analysis ◽  
Fea Model ◽  
Pad Wear ◽  
Diamond Disc

Chemical mechanical planarization (CMP) is widely used to planarize and smooth the surface of semiconductor wafers. In CMP, diamond disc conditioning is traditionally employed to restore pad planarity and surface asperity. Pad deformation which occurs during conditioning affects the material removal mechanism of CMP since pad shape, stress and strain are related to cut rate during conditioning, pad wear rate and wafer material removal rate (MRR) during polishing. Available reports concerning the effect of diamond disc conditioning on pad deformation are based on simplified models of the pad and do not consider its microstructure. In this study, a two-dimensional (2-D) finite element analysis (FEA) model is proposed to analyze the interaction between the diamond disc conditioner and the polishing pad. To enhance modeling fidelity, image processing is utilized to characterize the morphological and mechanical properties of the pad. An FEA model of the characterized pad is developed and utilized to study the effects of process parameters (conditioning pressure and pad stiffness) on pad deformation. The study reveals that understanding the morphological and mechanical properties of CMP pads is important to the design of high performance pads.

Effect of Pad Surface Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process

2013 ◽  
Vol 52 (1R) ◽  
pp. 018001 ◽  
Author(s):  
Xiaoyan Liao ◽  
Yun Zhuang ◽  
Leonard J. Borucki ◽  
Jiang Cheng ◽  
Siannie Theng ◽  
...  
Keyword(s):  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Interlayer Dielectric ◽  
Planarization Process

Aggressive Diamond Characterization and Wear Analysis during Chemical Mechanical Planarization

2012 ◽  
Vol 2 (1) ◽  
pp. P36-P41 ◽  
Author(s):  
Changhong Wu ◽  
Yun Zhuang ◽  
Xiaoyan Liao ◽  
Yubo Jiao ◽  
Yasa Adi Sampurno ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Wear Analysis

Development and Analysis of a High-Pressure Micro Jet Pad Conditioning System for Interlayer Dielectric Chemical Mechanical Planarization

2005 ◽  
Vol 44 (3) ◽  
pp. 1225-1231 ◽  
Author(s):  
Yoshiyuki Seike ◽  
Darren DeNardis ◽  
Masano Sugiyama ◽  
Keiji Miyachi ◽  
Toshiro Doi ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Mechanical Planarization ◽  
Interlayer Dielectric ◽  
Pad Conditioning

Study of Conditioner Abrasives in Chemical Mechanical Planarization

2009 ◽  
Vol 1157 ◽  
Author(s):  
Chhavi Manocha ◽  
Ashok Kumar ◽  
Vinay K. Gupta
Keyword(s):  
Manufacturing Industry ◽  
Surface Defects ◽  
Chemical Mechanical Planarization ◽  
Factors Affecting ◽  
Polishing Pad ◽  
Copper Wafers ◽  
Pad Wear ◽  
Polishing Pads

AbstractChemical Mechanical Planarization (CMP) has emerged as the central technology for polishing wafers in the semiconductor manufacturing industry to make integrated multi-level devices. Both chemical and mechanical processes work simultaneously to achieve local and global planarization. Although extensive research has been carried out to understand the various factors affecting the CMP process, many aspects remain unaddressed. One such aspect of CMP is the role of abrasives in the process of conditioning. Abrasives play an important role during conditioning to regenerate the clogged polishing pads. This research is focused on the study of abrasives in the process of conditioning with a focus on the size of abrasives. With diamond being widely used as an abrasive for conditioning the polishing pad, five different sizes of diamonds ranging from 0.25μm to 100μm were selected to condition the commercially available IC 1000 polishing pad. Properties like pad roughness and pad wear were measured to understand the effect of the abrasive size on the pad morphology and pad topography. In-situ ‘coefficient of friction’ was also monitored on the CETR bench top tester. The final impact was seen in the form of surface defects on the polished copper wafers using optical microscopy.

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