High Capacitance Density Thin Films on Metal Foils for Embedded Capacitor Applications : A Review

2006 ◽  
Vol 89 (23) ◽  
pp. 232910 ◽  
Author(s):  
Jong-Hyun Park ◽  
Cheng-Ji Xian ◽  
Nak-Jin Seong ◽  
Soon-Gil Yoon ◽  
Seung-Hyun Son ◽  
...  

2007 ◽  
Vol 1034 ◽  
Author(s):  
Beihai Ma ◽  
Do-Kyun Kwon ◽  
Manoj Narayanan ◽  
U. Balachandran

AbstractDevelopment of electronic devices with higher performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The “film-on-foil” approach is the most viable method to fabricate suitable passive components. We have deposited high-permittivity thin films of ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) on base metal foils by chemical solution deposition. These capacitors could be embedded into PWBs. However, formation of a parasitic low-permittivity interfacial layer of nickel oxide during thermal processing of the PLZT films considerably reduces the capacitance density. Two approaches were taken to overcome the problem. In the first, a conductive buffer layer of lanthanum nickel oxide (LNO) was inserted between the PLZT film and the nickel foil to hinder the formation of deleterious interfacial oxide. In the second, high temperature processing was done under low oxygen partial pressure such that no interfacial oxide was formed. By these approaches, we have grown high-quality ferroelectric PLZT films on nickel and copper foils. With samples of PLZT grown on LNO-buffered Ni, we measured a dielectric constant of 1300 (at 25°C) and 1800 (at 150°C), leakage current density of 6.6 × 10−9 A/cm2 (at 25°C) and 1.4 × 10−8 A/cm2 (at 150°C), and breakdown field strength >1.2 MV/cm. With samples of PLZT on Cu, we obtained encouraging initial results of dielectric constant >450 and dielectric loss tan(δ) ≈0.04.


2006 ◽  
Vol 969 ◽  
Author(s):  
Seungeun Lee ◽  
Jung Won Lee ◽  
Inhyung Lee ◽  
Yul Kyo Chung

AbstractDielectric properties of bismuth-zinc-niobium oxide (Bi1.5Zn1.0Nb1.5O7, BZN) thin films have been investigated for embedded capacitor. Crystalline BZN has a pyrochlore structure in nature and shows a dielectric constant of ∼ 200 and very low leakage current when crystallized. Since the process temperature is limited to < 200 due to an organic based substrate in printed circuit board, as-deposited BZN film is composed of an amorphous phase, confirmed by XRD analysis. However, it shows remarkably high dielectric constant of 113. It makes BZN to be a proper candidate as a decoupling embedded capacitor in power delivery circuits. Effects of post treatment such as oxygen plasma treatment and low temperature thermal annealing on dielectric properties of BZN thin films are studied. By optimizing deposition conditions, amorphous BZN thin film is well processed in the current PCB process and provides a capacitance density as high as 218 nF/cm2 and leakage current less than 1 μA/cm2 at 3V.


Author(s):  
Emmanuel Tetsi ◽  
Isabelle Bord Majek ◽  
Gilles Philippot ◽  
Cyril Aymonier ◽  
Roxan Lemire ◽  
...  

2010 ◽  
Vol 108 (7) ◽  
pp. 074103 ◽  
Author(s):  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
Vito Raineri ◽  
Graziella Malandrino ◽  
Roberta G. Toro ◽  
...  

2012 ◽  
Vol 38 ◽  
pp. S73-S77 ◽  
Author(s):  
Xiaohua Zhang ◽  
Wei Ren ◽  
Peng Shi ◽  
M. Saeed Khan ◽  
Xiaofeng Chen ◽  
...  

2010 ◽  
Vol 2010 (1) ◽  
pp. 000847-000854 ◽  
Author(s):  
Rabindra N. Das ◽  
John M. Lauffer ◽  
Steven G. Rosser ◽  
Mark D. Poliks ◽  
Voya R. Markovich

This paper discusses thin film technology based on barium titanate (BaTiO3)-epoxy polymer nanocomposites. In particular, we highlight recent developments on high capacitance, large area, thin film passives and their integration in System in a Package (SiP). A variety of nanocomposite thin films ranging from 2 microns to 25 microns thick were processed on PWB substrates by liquid coating or printing processes. SEM micrographs showed uniform particle distribution in the coatings. The electrical performance of composites was characterized by dielectric constant (Dk), capacitance and dissipation factor (loss) measurements. We have designed and fabricated several printed wiring board (PWB) and flip-chip package test vehicles focusing on resistors and capacitors. Two basic capacitor cores were used for this study. One is a layer capacitor. The second capacitor in this case study was discrete capacitor. Resin Coated Copper Capacitive (RC3) nanocomposites were used to fabricate 35 mm substrates with a two by two array of 15mm square isolated epoxy based regions; each having two to six RC3 based embedded capacitance layers. Cores are showing high capacitance density ranging from 15 nF to 30nF depending on Cu area, composition and thickness of the capacitors. In another design, we have used eight layer high density internal core and subsequent fine geometry n (1 to 3) buildup layers to form a n-8-n structure. The eight layer internal core has two resistance layers in the middle and 2 to 6 capacitance layer sequentially applied on the surface. The study also evaluates the resistor materials for embedded passives. Resistors are carbon based pastes and metal based alloys NiCrAlSi. Embedded resistor technology can use either thin film materials, that are applied on the copper foil, or screened carbon based resistor pastes that can achieve any resistor value at any level. For example, combination of 25 ohm per square material and 250 ohm per square material enables resistor ranges from 15 ohms through 30,000 ohms with efficient sizes for the embedded resistors. Similarly, printable resistors can be designed to cover the resistance in the range of 5 ohms to 1 Mohm. The embedded resistors can be laser trimmed to a tolerance of &lt;5% for applications that require tighter tolerance. Reliability of the test vehicles was ascertained by IR-reflow, thermal cycling, PCT (Pressure Cooker Test ) and solder shock. Embedded discrete capacitors were stable after PCT and solder shock. Capacitance change was less than 5% after IR reflow (assembly) preconditioning (3X, 245 °C) and 1400 cycles DTC (Deep Thermal Cycle).


2017 ◽  
Vol 110 (24) ◽  
pp. 243501 ◽  
Author(s):  
A. Chaker ◽  
P. Gonon ◽  
C. Vallée ◽  
A. Bsiesy

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