A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment

2007 ◽  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Integrated Circuit ◽  
Atomic Layer ◽  
Mixed Signal ◽  
Layer Deposition

Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride

RSC Advances ◽  
2016 ◽  
Vol 6 (72) ◽  
pp. 68515-68524 ◽  
Author(s):  
Luchana L. Yusup ◽  
Jae-Min Park ◽  
Yong-Ho Noh ◽  
Sun-Jae Kim ◽  
Won-Jun Lee ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Surface Sites ◽  
Thermodynamics And Kinetics ◽  
Layer Deposition ◽  
Kinetics Of

The reactivity of surface sites plays a very important role to determine the thermodynamics and kinetics of ALD processes.

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

2014 ◽  
Vol 211 (9) ◽  
pp. 2166-2171 ◽  
Author(s):  
Woochool Jang ◽  
Heeyoung Jeon ◽  
Chunho Kang ◽  
Hyoseok Song ◽  
Jingyu Park ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Layer Deposition
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