Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride

RSC Advances ◽  
2016 ◽  
Vol 6 (72) ◽  
pp. 68515-68524 ◽  
Author(s):  
Luchana L. Yusup ◽  
Jae-Min Park ◽  
Yong-Ho Noh ◽  
Sun-Jae Kim ◽  
Won-Jun Lee ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Surface Sites ◽  
Thermodynamics And Kinetics ◽  
Layer Deposition ◽  
Kinetics Of

The reactivity of surface sites plays a very important role to determine the thermodynamics and kinetics of ALD processes.

Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition

2008 ◽  
Vol 103 (11) ◽  
pp. 113509 ◽  
Author(s):  
Sung-Soo Yim ◽  
Do-Joong Lee ◽  
Ki-Su Kim ◽  
Soo-Hyun Kim ◽  
Tae-Sik Yoon ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Nucleation Kinetics ◽  
Layer Deposition ◽  
Kinetics Of

Kinetics of the WF6 and Si2H6 surface reactions during tungsten atomic layer deposition

2001 ◽  
Vol 479 (1-3) ◽  
pp. 121-135 ◽  
Author(s):  
J.W Elam ◽  
C.E Nelson ◽  
R.K Grubbs ◽  
S.M George
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Kinetics Of
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