Using Chemical Oxide Layer to Getter Nickel inside Nickel-Metal-Induced Lateral Crystallization Polycrystalline Silicon

2008 ◽  
Keyword(s):  
Oxide Layer ◽  
Polycrystalline Silicon ◽  
Nickel Metal ◽  
Lateral Crystallization

Using Chemical Oxide Layer to Getter Nickel inside Nickel-Metal-Induced Lateral Crystallization Polycrystalline Silicon

2019 ◽  
Vol 16 (9) ◽  
pp. 193-195
Author(s):  
Bau Ming Wang ◽  
Tzu-Ming Yang ◽  
Ching-Chieh Tseng ◽  
YewChung Sermon Wu
Keyword(s):  
Oxide Layer ◽  
Polycrystalline Silicon ◽  
Nickel Metal ◽  
Lateral Crystallization

Nickel Metal Induced Lateral Crystallization of Patterned Amorphous Silicon Thin Film

2007 ◽  
Vol 561-565 ◽  
pp. 1149-1152 ◽  
Author(s):  
Gou Nakagawa ◽  
Tanemasa Asano
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Wide Area ◽  
Competitive Growth ◽  
Silicon Thin Film ◽  
Nickel Metal ◽  
Growth Area ◽  
Lateral Crystallization ◽  
Si Thin Film ◽  
Pattern Width

Metal-induced lateral crystallization (MILC) of patterned amorphous silicon(a-Si) thin film using Ni as a catalyst has been investigated. Ni-MILC grains are based on the growth of needle-like crystals due to the migration of NiSi2 precipitates, which located at the crystalline front, along the <111> directions. In the case where the needle-like crystallites collided at the a-Si pattern edge, not only “turn” or “branch” of the needle-like crystallites toward one of the possible <111> directions but also the growth along the pattern edge were observed. By limiting the growth area, the competitive growth of dendrite crystals that originated in needle-like crystallites was found to appear. This phenomenon resulted in the orientation alignment of MILC crystals in a wide area. Besides, the grain-filtering of MILC crystals was found to be possible by narrowing the pattern width.

TEM Study of Amorphous Silicon Recrystallization

1999 ◽  
Vol 5 (S2) ◽  
pp. 754-755
Author(s):  
Lawrence K Lam ◽  
Nan Jiang ◽  
Dieter G Ast ◽  
John Silcox
Keyword(s):  
Amorphous Silicon ◽  
Oxide Layer ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nickel Silicide ◽  
Device Performance ◽  
Thermal Budget ◽  
Temperature Oxide ◽  
Lateral Crystallization ◽  
Improve Device

Recently there has been increasing interest in nickel induced lateral recrystallization of amorphous silicon because of its potential to improve device performance and to lower the thermal budget during processing. The hypothesis is that the formation of nickel silicide provides a low energy nucleus for the recrystallization of amorphous silicon. The silicide, moving into a-Si, leaves crystalline silicon behind.1 The grains formed, therefore, tend to elongated. In this paper, we attempt to use TEM to investigate in detail the nickel assisted lateral crystallization of amorphous silicon. The sample was prepared by first depositing a 1000A thick low temperature, oxide layer, LTO, on Corning 1737 glass. A 1000A thick amorphous silicon layer, a-Si, and 1000A thick a-Si were deposited subsequently. The sample was pattern and etched with hydrofluoric acid to form lOum x lOum holes in the oxide layer. Next, 200A of nickel was evaporated onto the sample, followed by a 600°C, 6 hours anneal to induce lateral recrystallization.

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