Direct/Indirect Junction Between Channel Inversion Layer and Doped Source/Drain Region on Metal-Induced Lateral Crystallization Polycrystalline Silicon Bottom Gate TFTs

2017 ◽  
Vol 64 (2) ◽  
pp. 432-437
Author(s):  
Ki Hwan Seok ◽  
Sol Kyu Lee ◽  
Hyung Yoon Kim ◽  
Hee Jae Chae ◽  
Yong Hee Lee ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Inversion Layer ◽  
Drain Region ◽  
Lateral Crystallization ◽  
Bottom Gate

Electrical Properties of Bottom Gate Poly-Si TFTs by NiSi2 Seed-Induced Lateral Crystallization and Its Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3429-3433
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Zohreh Kiaee ◽  
Hyung Yoon Kim ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Polycrystalline Silicon ◽  
Subthreshold Slope ◽  
Laser Method ◽  
Investment Cost ◽  
Sequential Lateral Solidification ◽  
Amorphous Si ◽  
Lateral Crystallization ◽  
Bottom Gate ◽  
Steep Subthreshold Slope

ABSTRACT In this paper, the electrical properties of bottom-gate (BG) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) by NiSi2 seed-induced lateral crystallization (SILC) and its applications are presented. Sequential lateral solidification (SLS), which is one of crystallization methods, is known to have poor electrical properties of TFTs with BG structures due to problems induced by laser. Therefore, the laser method cannot be used to well-developed production line of amorphous-Si (a-Si) TFT, resulting in large initial investment cost to change fabrication procedures. On the other hand, the BG poly-Si TFT by SILC (SILC-BGPS TFT) has basically compatible process flows with that of the a-Si TFT. The SILC-BGPS TFT exhibited threshold voltage of -3.9 V, steep subthreshold slope of 130 mV/dec, a high field-effect mobility of 129 cm2/Vs , and I on /I off ratio of ∼106.

Advanced Four-Mask Process Bottom-Gate Poly-Si TFT via Self-Aligned NiSi2Seed-Induced Lateral Crystallization

2016 ◽  
Vol 37 (10) ◽  
pp. 1292-1294 ◽  
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Hyung Yoon Kim ◽  
Zohreh Kiaee ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Lateral Crystallization ◽  
Bottom Gate

Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

2016 ◽  
Vol 122 (6) ◽  
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Jae Hyo Park ◽  
Hyung Yoon Kim ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Nickel Silicide ◽  
Lateral Crystallization ◽  
Channel Bottom ◽  
Si Thin Film ◽  
Bottom Gate
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