Selective Epitaxial Growth of Silicon Layer Using Batch-Type Equipment for Vertical Diode Application to Next Generation Memories

2010 ◽  
Keyword(s):  
Epitaxial Growth ◽  
Silicon Layer ◽  
Next Generation ◽  
Selective Epitaxial Growth ◽  
Batch Type

Selective Epitaxial Growth of Silicon Layer Using Batch-Type Equipment for Vertical Diode Application to Next Generation Memories

2019 ◽  
Vol 28 (1) ◽  
pp. 281-286 ◽  
Author(s):  
Kong-Soo Lee ◽  
Dae-Han Yoo ◽  
Young-Sub Yoo ◽  
Jae-Jong Han ◽  
Seok-Sik Kim ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silicon Layer ◽  
Next Generation ◽  
Selective Epitaxial Growth ◽  
Batch Type

Silicide Contacts for Sub-0.25 μm Devices

1999 ◽  
Vol 564 ◽  
Author(s):  
L. J. Chen ◽  
S. L. Cheng ◽  
S. M. Chang ◽  
Y. C. Peng ◽  
H. Y. Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Silicon Layer ◽  
Metal Contacts ◽  
Nitrogen Ion Implantation ◽  
Selective Epitaxial Growth ◽  
Nitrogen Ion ◽  
Thermal Stability Of

AbstractLow resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μ m devices. In the present paper, we review recent progress in the investigations of lowresistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer, improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001 )Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

Improvements in Zone Melt Recrystallized Soi Layers by the Use of Selective Epitaxial Growth in the Seed Windows.

1987 ◽  
Vol 107 ◽  
Author(s):  
D.A. Williams ◽  
R.A. McMahon ◽  
H. Ahmed ◽  
L. Karapiperis ◽  
G. Garry ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Three Dimensional ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Cross Sectional ◽  
Selective Epitaxial Growth ◽  
Beam System ◽  
Transmission Electron ◽  
The One ◽  
Zone Melt

AbstractThe effect of selective epitaxial growth (SEG) of silicon in the seed windows of silicon on insulator structures prior to recrystallization has been investigated. Subsequent zone melt recrystallization of these structures was performed in a dual electron beam system, and it was found that the full planarisation of the deposited silicon layer results in uniform film thickness after recrystallization. Cross sectional scanning and transmission electron microscopy, optical microscopy after defect etching, and bevelling are used to analyse the material. The SEG method improves the uniformity of the film for device island etching, and so is useful for all silicon on insulator applications, although the one of most interest for these investigations is the production of three dimensional circuitry. This is achieved by stacking layers of devices, and so planarity is particularly important.

Thick selective epitaxial growth of silicon at 960°C using silane only

1992 ◽  
Vol 18 (3) ◽  
pp. 237-246 ◽  
Author(s):  
N. Afshar-Hanaii ◽  
J.M. Bonar ◽  
A.G.R. Evans ◽  
G.J. Parker ◽  
C.M.K. Starbuck ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth
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