Silicide Contacts for Sub-0.25 μm Devices

1999 ◽  
Vol 564 ◽  
Author(s):  
L. J. Chen ◽  
S. L. Cheng ◽  
S. M. Chang ◽  
Y. C. Peng ◽  
H. Y. Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Ion Implantation ◽  
Epitaxial Growth ◽  
Silicon Layer ◽  
Metal Contacts ◽  
Nitrogen Ion Implantation ◽  
Selective Epitaxial Growth ◽  
Nitrogen Ion ◽  
Thermal Stability Of

AbstractLow resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μ m devices. In the present paper, we review recent progress in the investigations of lowresistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer, improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001 )Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

Effects of nitrogen ion implantation on the thermal stability of tungsten thin films

1998 ◽  
Vol 16 (2) ◽  
pp. 477-481 ◽  
Author(s):  
Yong Tae Kim ◽  
Chul Soon Kwon ◽  
Dong Joon Kim ◽  
Jong-Wan Park ◽  
Chang Woo Lee
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Ion Implantation ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Thermal Stability Of

scholarly journals Oxidation resistance and thermal stability of a β-solidified γ-TiAl based alloy after nitrogen ion implantation

2020 ◽  
Vol 177 ◽  
pp. 109003
Author(s):  
D.O. Panov ◽  
V.S. Sokolovsky ◽  
N.D. Stepanov ◽  
S.V. Zherebtsov ◽  
P.V. Panin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Implantation ◽  
Oxidation Resistance ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Thermal Stability Of

The Physical and Electrical Properties of Buried Nitride Soi Structures Synthesized By Nitrogen Ion Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
C. Slawinski ◽  
B.-Y. Mao ◽  
P.-H. Chang ◽  
H.W. Lam ◽  
J.A. Keenan
Keyword(s):  
Ion Implantation ◽  
Nitrogen Concentration ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Nitrogen Ion Implantation ◽  
Donor Formation ◽  
Nitrogen Ion

ABSTRACTBuried nitride silicon-on-insulator (SOI) structures have been fabricated using the technique of nitrogen ion implantation. The crystallinity of the top silicon film was found to be exceptionally good. The minimum channeling yield, Xmin' was better than 3%. This is comparable to the value observed for single crystal silicon. The buried insulator formed during the anneals has been identified as polycrystalline α-Si3 N4 with numerous silicon inclusions. This nitride, however, has been found to remain amorphous in regions at the center of the implant where the nitrogen concentration exceeds the stoichiometric level of Si3N4. Nitrogen donor formation in the top silicon layer has also been observed.

Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 3036-3042 ◽  
Author(s):  
Seiji Yaguchi ◽  
Tsunenobu Kimoto ◽  
Naoki Ohyama ◽  
Hiroyuki Matsunami
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Temperature Radiation ◽  
Radiation Hard

Ion Implantation into High-Speed Steel for Improved Tribology

1993 ◽  
Vol 316 ◽  
Author(s):  
J-P. Hirvonen ◽  
D. Rück ◽  
S. Yan ◽  
R. Lappalainen ◽  
P. Torri
Keyword(s):  
Ion Implantation ◽  
High Speed ◽  
Critical Parameter ◽  
High Speed Steel ◽  
Dry Sliding ◽  
Nitrogen Ion Implantation ◽  
Mechanical And Tribological Properties ◽  
Martensitic Microstructure ◽  
Nitrogen Ion ◽  
Thermal Stability Of

ABSTRACTIon implantation into steels with a martensitic microstracture is reviewed and discussed in terms of different implanted species and observed changes in the structure. Both single ion and dual ion implantation treatment are included. The disability of the nitrogen ion implantation to improve the tribological characteristics of steels with a martensitic microstructure can be overcome by dual implantation of titanium and carbon, for example. Results of tribological tests on samples in which titanium is replaced by chromium are more controversial, although changes in the sliding characteristics were observed. Dry sliding on the samples implanted up to 1018 ions/cm2 is totally different by nature and -based on the reported results- associated with the formation of carbon precipitates on the surface. The thermal stability of implanted nitrogen and carbon in MЗ high-speed steel was examined and nitrogen was shown to be less stable than carbon. Mechanical and tribological properties were further changed by heat treatment after ion implantation, which indicates that temperature is also a critical parameter during ion implantation.

The Use of SiGe Barriers During the Formation of p+ Shallow Junctions by Ion Implantation

2004 ◽  
Vol 810 ◽  
Author(s):  
Phillip E. Thompson ◽  
Joe Bennett ◽  
Susan Felch
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Ion Implantation ◽  
Control Sample ◽  
Alloy Layer ◽  
Junction Depth ◽  
Effective Barrier ◽  
High Temperature Processes ◽  
Shallow Junctions ◽  
Thermal Stability Of

ABSTRACTUltra-shallow p+ junctions are required for next generation electronics. We present a technique for the formation of ultra-shallow p+ junctions that increases the thermal stability of the junctions formed by ion implantation. By using a 10 nm Si1−xGex barrier layer, the diffusion of B is inhibited during high temperature processes. Alloys having a composition from x = 0 to 0.4 were investigated and it is shown that the most effective barrier had the maximum Ge fraction. The junction depth decreased to 36.7 nm for a 5×1015/cm2 1kV BF3 plasma implant spike annealed at 1050°C, compared to a junction depth of 48 nm for a Si control sample having the identical implant and anneal. It is hypothesized that the inhibition of B diffusion in the alloy layer is caused by a reduction of the Si self-interstitials in the alloy.

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