Multiscale 3D Patterning of Ag Nanoparticles in Dielectric Layers Using Low-Energy Ion Implantation and Ion- Or Electron-Beam Lithography

2011 ◽  
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Electron Beam Lithography ◽  
Ag Nanoparticles ◽  
Low Energy ◽  
Dielectric Layers

Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation

2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4157-4162 ◽  
Author(s):  
Tetsuro Nakasugi ◽  
Atsushi Ando ◽  
Ryoichi Inanami ◽  
Noriaki Sasaki ◽  
Kazuyoshi Sugihara ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Low Energy ◽  
Energy Electron ◽  
Chemically Amplified ◽  
Edge Roughness ◽  
Chemically Amplified Resist ◽  
Low Energy Electron

Fabrication of integrated injection logic with electron-beam lithography and ion implantation

1978 ◽  
Vol 25 (4) ◽  
pp. 402-407 ◽  
Author(s):  
S.A. Evans ◽  
J.L. Bartelt ◽  
B.J. Sloan ◽  
G.L. Varnell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Electron Beam Lithography

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Nanometer Patterning by Focused Low Energy Electron Beam Lithography

1987 ◽  
Vol 26 (Part 2, No. 7) ◽  
pp. L1165-L1167
Author(s):  
Akio Sugita ◽  
Masami Kakuchi ◽  
Toshiaki Tamamura
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron
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