Large Gate Swing and High Threshold Voltage Enhancement-Mode AlGaN/GaN HEMTs Using Low Energy Fluorine Ion Implantation in GaN Layer

2015 ◽  
Keyword(s):  
Ion Implantation ◽  
Threshold Voltage ◽  
Low Energy ◽  
High Threshold ◽  
Enhancement Mode ◽  
Gan Hemts

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

2005 ◽  
Vol 41 (7) ◽  
pp. 449 ◽  
Author(s):  
W.B. Lanford ◽  
T. Tanaka ◽  
Y. Otoki ◽  
I. Adesida
Keyword(s):  
Threshold Voltage ◽  
High Threshold ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Recessed Gate

scholarly journals Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs

2017 ◽  
Vol 64 (1) ◽  
pp. 253-257 ◽  
Author(s):  
Xin Wan ◽  
Oliver K. Baker ◽  
Michael W. McCurdy ◽  
En Xia Zhang ◽  
Max Zafrani ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Low Energy ◽  
Irradiation Effects ◽  
Enhancement Mode ◽  
Energy Proton ◽  
Gan Hemts

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

2015 ◽  
Vol 24 (1) ◽  
pp. 017303 ◽  
Author(s):  
Wei-Wei Sun ◽  
Xue-Feng Zheng ◽  
Shuang Fan ◽  
Chong Wang ◽  
Ming Du ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Degradation Mechanism ◽  
Enhancement Mode ◽  
Gan Hemts

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Current ◽  
Enhancement Mode ◽  
Recessed Gate
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