490 mA/mm Drain Current and 1.9 V Threshold Voltage Enhancement-mode p-GaN HEMTs and High-temperature Characteristics

2021 ◽  
pp. 108109
Author(s):  
Kai Liu ◽  
Chong Wang ◽  
Xuefeng Zheng ◽  
Xiaohua Ma ◽  
Zeyang Huang ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Drain Current ◽  
Temperature Characteristics ◽  
Enhancement Mode ◽  
Gan Hemts

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Current ◽  
Enhancement Mode ◽  
Recessed Gate

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

2010 ◽  
Vol 31 (12) ◽  
pp. 1383-1385 ◽  
Author(s):  
Ronghua Wang ◽  
Paul Saunier ◽  
Xiu Xing ◽  
Chuanxin Lian ◽  
Xiang Gao ◽  
...  
Keyword(s):  
Current Density ◽  
Drain Current ◽  
Enhancement Mode ◽  
Gan Hemts

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

2009 ◽  
Vol 615-617 ◽  
pp. 715-718 ◽  
Author(s):  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Robin L. Kelley ◽  
David C. Sheridan
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Large Area ◽  
Enhancement Mode ◽  
High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

Drain Current Characteristics of Enhancement Mode GaN HEMTs

2020 ◽  
Author(s):  
Hitoshi Aoki ◽  
Hiroyuki Sakairi ◽  
Naotaka Kuroda ◽  
Atsushi Yamaguchi ◽  
Ken Nakahara
Keyword(s):  
Drain Current ◽  
Enhancement Mode ◽  
Gan Hemts ◽  
Current Characteristics

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

2014 ◽  
Vol 35 (1) ◽  
pp. 33-35 ◽  
Author(s):  
Zhe Xu ◽  
Jinyan Wang ◽  
Yong Cai ◽  
Jingqian Liu ◽  
Zhen Yang ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Characteristics ◽  
Enhancement Mode
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