Comparative Analysis of Growth Rate Enhancement and Ge Redistribution during Silicon-Germanium Oxidation by Rapid Thermal Oxidation

2016 ◽  
Keyword(s):  
Growth Rate ◽  
Comparative Analysis ◽  
Thermal Oxidation ◽  
Silicon Germanium ◽  
Rate Enhancement ◽  
Rapid Thermal Oxidation

Growth rate enhancement using ozone during rapid thermal oxidation of silicon

1994 ◽  
Vol 65 (4) ◽  
pp. 412-414 ◽  
Author(s):  
A. Kazor ◽  
R. Gwilliam ◽  
Ian W. Boyd
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Rate Enhancement ◽  
Rapid Thermal Oxidation

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films

2002 ◽  
Vol 91 (4) ◽  
pp. 2443-2448 ◽  
Author(s):  
W. K. Choi ◽  
A. Natarajan ◽  
L. K. Bera ◽  
A. T. S. Wee ◽  
Y. J. Liu
Keyword(s):  
Radio Frequency ◽  
Thermal Oxidation ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Oxidation ◽  
Germanium Films

Characteristics of Thin Layers of SiO2 Fabricated by Rapid Thermal Oxidation

1987 ◽  
Vol 92 ◽  
Author(s):  
S. Prasad ◽  
J. Haase ◽  
R. Früchtnicht ◽  
R. Ferretti ◽  
D. Haack
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Thin Layers ◽  
Rapid Thermal Oxidation ◽  
High Temperature Anneal ◽  
Work Function Difference ◽  
Function Difference

ABSTRACTThin layers of SiO2 (60-300 Å) were fabricated by rapid thermal oxidation (RTO). Growth rate on (100) and (111) Si was determined. Two different high-temperature anneal cycles were used to reduce the interface state density. Work function difference between metal and semiconductor depends upon technology and can be attributed to the changes in Si-SiO2 barrier height.

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