Characteristics of Thin Layers of SiO2 Fabricated by Rapid Thermal Oxidation
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ABSTRACTThin layers of SiO2 (60-300 Å) were fabricated by rapid thermal oxidation (RTO). Growth rate on (100) and (111) Si was determined. Two different high-temperature anneal cycles were used to reduce the interface state density. Work function difference between metal and semiconductor depends upon technology and can be attributed to the changes in Si-SiO2 barrier height.
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2009 ◽
Vol 615-617
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pp. 789-792
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1979 ◽
Vol 126
(9)
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pp. 1573-1581
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2013 ◽
Vol 133
(7)
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pp. 1279-1284
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1998 ◽
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